Semiconductor device and display device

ABSTRACT

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.12/875,808, filed Sep. 3, 2010, now allowed, which claims the benefit ofa foreign priority application filed in Japan as Serial No. 2009-209099on Sep. 10, 2009, both of which are incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a drivingmethod thereof.

2. Description of the Related Art

In recent years, with the increase of large display devices such asliquid crystal televisions, display devices have actively developed. Inparticular, a technique for forming a driver circuit such as a gatedriver over the same substrate as a pixel portion with the use of atransistor formed using a non-single-crystal semiconductor has activelydeveloped because the technique greatly contributes to reduction inmanufacturing cost and improvement in reliability.

However, a transistor formed using a non-single-crystal semiconductordeteriorates. Accordingly, the decrease in mobility, the rise (or thefall) in the threshold voltage, or the like occurs. In particular, in agate driver, a transistor having a function of applying negative voltage(also referred to as an L-level potential) to a gate signal line (such atransistor is also referred to as a pull-down transistor) greatlydeteriorates. This is because the pull-down transistor is turned on soas to apply negative voltage to the gate signal line in the case wherethe gate signal line is not selected. In other words, the pull-downtransistor is on in most of the one frame period because the gate signalline is not selected.

In order to solve the foregoing problems, Reference 1 discloses a gatedriver where deterioration of a pull-down transistor can be suppressed.Reference 1 discloses a circuit capable of outputting pulses (e.g., aholding control portion 350 in FIG. 7 in Reference 1) that is providedin each stage of the gate driver in order to suppress deterioration ofthe pull-down transistor. The conduction state of the pull-downtransistor is controlled with an output signal of the circuit. Thecircuit outputs a pulse in synchronization with a clock signal or thelike. Therefore, the length of time during which the pull-downtransistor is on can be decreased, so that deterioration of thepull-down transistor can be suppressed. However, the circuit capable ofoutputting pulses includes a transistor Q32 which is on in most of theone frame period. Therefore, the transistor Q32 deteriorates.

REFERENCE

[Reference 1] Japanese Published Patent Application No. 2005-050502

SUMMARY OF THE INVENTION

In one embodiment of the present invention, deterioration of a firsttransistor, a second transistor, and first to third switches issuppressed in a semiconductor device including the first transistor, thesecond transistor, and the first to third switches. Alternatively,deterioration of first to fifth transistors is suppressed in asemiconductor device including the first to fifth transistors.Alternatively, in the semiconductor device further including a sixthtransistor, deterioration of the first to sixth transistors issuppressed. Alternatively, in the semiconductor device further includinga seventh transistor, deterioration of the first to seventh transistorsis suppressed.

One embodiment of the present invention is a semiconductor deviceincluding a first transistor, a second transistor, a first switch, asecond switch, and a third switch. A first terminal of the firsttransistor is connected to a first wiring. A second terminal of thefirst transistor is connected to a second wiring. A gate and a firstterminal of the second transistor are connected to the first wiring. Asecond terminal of the second transistor is connected to a gate of thefirst transistor. The first switch is connected between the secondwiring and a third wiring. The second switch is connected between thesecond wiring and the third wiring. The third switch is connectedbetween the gate of the first transistor and the third wiring.

In the above embodiment, a first period and a second period may beprovided. In the first period, the first switch, the second switch, andthe third switch may be turned off and a potential of the first wiringmay become an H level. In the second period, the first switch may beturned off, the second switch and the third switch may be turned on, andthe potential of the first wiring may become an L level.

One embodiment of the present invention is a semiconductor deviceincluding a first transistor, a second transistor, a third transistor, afourth transistor, and a fifth transistor. A first terminal of the firsttransistor is connected to a first wiring. A second terminal of thefirst transistor is connected to a second wiring. A gate and a firstterminal of the second transistor are connected to the first wiring. Asecond terminal of the second transistor is connected to a gate of thefirst transistor. A gate of the third transistor is connected to afourth wiring. A first terminal of the third transistor is connected toa third wiring. A second terminal of the third transistor is connectedto the second wiring. A gate of the fourth transistor is connected to afifth wiring. A first terminal of the fourth transistor is connected tothe third wiring. A second terminal of the fourth transistor isconnected to the second wiring. A gate of the fifth transistor isconnected to the fifth wiring. A first terminal of the fifth transistoris connected to the third wiring. A second terminal of the fifthtransistor is connected to the gate of the first transistor.

In the above embodiment, the channel width of the fifth transistor maybe larger than the channel width of the second transistor, and thechannel width of the second transistor may be larger than the channelwidth of the first transistor.

In the above embodiment, the semiconductor device may include a sixthtransistor. A gate of the sixth transistor may be connected to thesecond wiring. A first terminal of the sixth transistor may be connectedto the third wiring. A second terminal of the sixth transistor may beconnected to a sixth wiring.

In the above embodiment, a period A and a period B may be provided. Inthe period A, a potential of the first wiring may become an H level;potentials of the fifth wiring and the fourth wiring may become an Llevel; the first transistor, the second transistor, and the sixthtransistor may be turned on; the third transistor, the fourthtransistor, and the fifth transistor may be turned off; and a potentialof the sixth wiring may become an L level. In the period B, thepotential of the first wiring may become an L level; the potential ofthe fifth wiring may become an H level; the potential of the fourthwiring may become an L level; the first transistor, the secondtransistor, the third transistor, and the sixth transistor may be turnedoff; the fourth transistor and the fifth transistor may be turned on;and the potential of the sixth wiring may become an L level.

In the above embodiment, the semiconductor device may include a seventhtransistor. A gate of the seventh transistor may be connected to thefourth wiring. A first terminal of the seventh transistor may beconnected to the first wiring. A second terminal of the seventhtransistor may be connected to the sixth wiring.

In the above embodiment, the period A, the period B, a period C, aperiod D, and a period E may be provided. In the period A, the potentialof the first wiring may become an H level; potentials of the fifthwiring and the fourth wiring may become an L level; the firsttransistor, the second transistor, and the sixth transistor may beturned on; the third transistor, the fourth transistor, the fifthtransistor, and the seventh transistor may be turned off; and thepotential of the sixth wiring may become an L level. In the period B,the potential of the first wiring may become an L level; the potentialof the fifth wiring may become an H level; the potential of the fourthwiring may become an L level; the first transistor, the secondtransistor, the third transistor, and the sixth transistor may be turnedoff; the fourth transistor and the fifth transistor may be turned on;and the potential of the sixth wiring may become an L level. In theperiod C, the potential of the first wiring may become an L level; thepotentials of the fifth wiring and the fourth wiring may become an Hlevel; the first transistor, the second transistor, and the sixthtransistor may be turned off; the third transistor, the fourthtransistor, the fifth transistor, and the seventh transistor may beturned on; and the potential of the sixth wiring may become an L level.In the period D, the potential of the first wiring may become an Hlevel; the potential of the fifth wiring may become an L level; thepotential of the fourth wiring may become an H level; the firsttransistor, the second transistor, the third transistor, and the seventhtransistor may be turned on; the fourth transistor, the fifthtransistor, and the sixth transistor may be turned off; and thepotential of the sixth wiring may become an H level. In the period E,the potential of the first wiring may become an L level; the potentialof the fifth wiring may become an H level; the potential of the fourthwiring may become an L level; the first transistor, the secondtransistor, the third transistor, the sixth transistor, and the seventhtransistor may be turned off; the fourth transistor and the fifthtransistor may be turned on; and the potential of the sixth wiring maybecome an L level.

In each of the above embodiments of the present invention, a variety ofswitches can be used as a switch. An electrical switch, a mechanicalswitch, or the like can be used as a switch. That is, any element can beused as a switch as long as it can control current, without limitationto a certain element. A transistor (e.g., a bipolar transistor or a MOStransistor), a diode (e.g., a PN diode, a PIN diode, a Schottky diode,an MIM (metal insulator metal) diode, an MIS (metal insulatorsemiconductor) diode, or a diode-connected transistor), a logic circuitin which such elements are combined, or the like can be used as anelectrical switch. A switch formed using a MEMS (micro electromechanical system) technology, such as a digital micromirror device(DMD), can be used as a mechanical switch. Such a switch includes anelectrode which can be moved mechanically, and operates by controllingconduction and non-conduction in accordance with movement of theelectrode.

In the case where a transistor is used as a switch, the polarity(conductivity type) of the transistor is not particularly limited to acertain type because it operates just as a switch. However, a transistorhaving polarity with smaller off-state current is preferably used whenthe amount of off-state current is to be suppressed. A transistorprovided with an LDD region, a transistor with a multi-gate structure,or the like can be used as a transistor with smaller off-state current.

In each of the above embodiments of the present invention, when atransistor is used as a switch and a potential of a source of thetransistor is close to a potential of a low-potential-side power source(e.g., V_(ss), GND, or 0 V), an n-channel transistor is preferably usedas the switch. In contrast, a p-channel transistor is preferably used asthe switch when the potential of the source of the transistor is closeto a potential of a high-potential-side power source (e.g., V_(dd)).This is because the absolute value of gate-source voltage can beincreased when the potential of the source of the n-channel transistoris close to a potential of a low-potential-side power source and whenthe potential of the source of the p-channel transistor is close to apotential of a high-potential-side power source, so that the transistorcan be more accurately operated as a switch. Alternatively, this isbecause the transistor does not often perform source follower operation,so that the decrease in output voltage does not often occur.

In each of the above embodiments of the present invention, a CMOS switchmay be used as a switch with the use of both an n-channel transistor anda p-channel transistor. By using a CMOS switch, the switch can be moreaccurately operated as a switch because current can flow when either thep-channel transistor or the n-channel transistor is turned on.Therefore, voltage can be appropriately output regardless of whethervoltage of a signal input to the switch is high or low. Alternatively,since the voltage amplitude value of a signal for turning on or off theswitch can be made small, power consumption can be reduced.

Note that when a transistor is used as a switch, the switch includes aninput terminal (one of a source and a drain), an output terminal (theother of the source and the drain), and a terminal for controllingconduction (a gate) in some cases. On the other hand, when a diode isused as a switch, the switch does not include a terminal for controllingconduction in some cases. Therefore, when a diode is used as a switch,the number of wirings for controlling terminals can be reduced ascompared to the case where a transistor is used.

In the invention disclosed in this specification, transistors with avariety of structures can be used as a transistor. That is, there is nolimitation on the structures of transistors to be used.

In this specification, a semiconductor device corresponds to a deviceincluding a circuit having a semiconductor element (e.g., a transistor,a diode, or a thyristor). Note that the semiconductor device maycorrespond to also all devices that can function by utilizingsemiconductor characteristics and a device having a semiconductormaterial. In this specification, a display device corresponds to adevice having a display element.

In this specification, a drive device corresponds to a device having asemiconductor element, an electric circuit, or an electronic circuit.For example, a transistor which controls input of signals from a sourcesignal line to pixels (also referred to as a selection transistor, aswitching transistor, or the like), a transistor which supplies voltageor current to a pixel electrode, a transistor which supplies voltage orcurrent to a light-emitting element, and the like are examples of thedrive device. A circuit which supplies signals to a gate signal line(also referred to as a gate driver, a gate line driver circuit, or thelike), a circuit which supplies signals to a source signal line (alsoreferred to as a source driver, a source line driver circuit, or thelike), and the like are also examples of the drive device.

A display device, a semiconductor device, a lighting device, a coolingdevice, a light-emitting device, a reflective device, a drive device,and the like can be combined with each other, and such a device isincluded in an embodiment of the present invention. For example, adisplay device includes a semiconductor device and a light-emittingdevice in some cases. Alternatively, a semiconductor device includes adisplay device and a drive device in some cases.

In each of the above embodiments of the present invention, all circuitsthat are necessary to realize a predetermined function can be formedusing the same substrate (e.g., a glass substrate, a plastic substrate,a single crystal substrate, or an SOI substrate). Thus, cost can bereduced by reduction in the number of components or reliability can beimproved by reduction in the number of connections to circuitcomponents.

It is possible not to form all the circuits that are necessary torealize the predetermined function over the same substrate. That is,some of the circuits which are necessary to realize the predeterminedfunction can be formed using one substrate and some of the circuitswhich are necessary to realize the predetermined function can be formedusing another substrate. For example, some of the circuits which arenecessary to realize the predetermined function can be formed using aglass substrate and some of the circuits which are necessary to realizethe predetermined function can be formed using a single crystalsubstrate (or an SOI substrate). The single crystal substrate over whichsome of the circuits which are necessary to realize the predeterminedfunction (such a substrate is also referred to as an IC chip) can beconnected to the glass substrate by COG (chip on glass), and the IC chipcan be provided over the glass substrate. Alternatively, the IC chip canbe connected to the glass substrate by TAB (tape automated bonding), COF(chip on film), SMT (surface mount technology), a printed circuit board,or the like.

In this specification, when it is explicitly described that “X and Y areconnected”, the case where X and Y are electrically connected, the casewhere X and Y are functionally connected, and the case where X and Y aredirectly connected are included therein. Here, each of X and Y is anobject (e.g., a device, an element, a circuit, a wiring, an electrode, aterminal, a conductive film, or a layer). Therefore, another element maybe interposed between elements having a connection relationshipillustrated in drawings and texts, without limitation to a predeterminedconnection relationship, for example, the connection relationshipillustrated in the drawings and the texts.

For example, in the case where X and Y are electrically connected, oneor more elements which enable electrical connection between X and Y(e.g., a switch, a transistor, a capacitor, an inductor, a resistor,and/or a diode) can be connected between X and Y.

For example, in the case where X and Y are functionally connected, oneor more circuits which enable functional connection between X and Y(e.g., a logic circuit such as an inverter, a NAND circuit, or a NORcircuit; a signal converter circuit such as a DA converter circuit, anAD converter circuit, or a gamma correction circuit; a potential levelconverter circuit such as a power supply circuit (e.g., a dc-dcconverter, a step-up dc-dc converter, or a step-down dc-dc converter) ora level shifter circuit for changing a potential level of a signal; avoltage source; a current source; a switching circuit; an amplifiercircuit such as a circuit which can increase signal amplitude, theamount of current, or the like, an operational amplifier, a differentialamplifier circuit, a source follower circuit, or a buffer circuit; asignal generation circuit; a memory circuit; and/or a control circuit)can be connected between X and Y. Note that for example, in the casewhere a signal output from X is transmitted to Y even when anothercircuit is interposed between X and Y, X and Y are functionallyconnected.

In this specification, when an object is explicitly described in asingular form, the object is preferably singular. Note that even in thiscase, the object can be plural. In a similar manner, when an object isexplicitly described in a plural form, the object is preferably plural.Note that even in this case, the object can be singular.

The size, the thickness of layers, or regions in the drawings of thisapplication are exaggerated for simplicity in some cases. Therefore,embodiments of the present invention are not limited to such scalesillustrated in the drawings. The drawings are perspective views of idealexamples, and shapes or values are not limited to those illustrated inthe drawings. For example, the following can be included: variation inshape due to a manufacturing technique; variation in shape due to anerror; variation in signal, voltage, or current due to noise; variationin signal, voltage, or current due to a difference in timing: or thelike.

Note that technical terms are used in order to describe a specificembodiment, example, or the like in many cases. However, one embodimentof the present invention should not be construed as being limited by thetechnical terms.

Note that terms which are not defined (including terms used for scienceand technology, such as technical terms or academic parlance) can beused as terms which have meaning equal to general meaning that anordinary person skilled in the art understands. It is preferable thatterms defined by dictionaries or the like be construed as consistentmeaning with the background of related art.

Note that terms such as “first”, “second”, and “third” are used fordistinguishing various elements, members, regions, layers, areas, andthe like from others. Therefore, the terms such as “first”, “second”,and “third” do not limit the order and the number of the elements,members, regions, layers, areas, and the like. Further, for example, theterm “first” can be replaced with the term “second”, “third”, or thelike.

Terms for describing spatial arrangement, such as “over”, “above”,“under”, “below”, “laterally”, “right”, “left”, “obliquely”, “behind”,“front”, “inside”, “outside”, and “in” are used for briefly showing arelationship between an element and another element or between a featureand another feature with reference to a diagram. Note that embodimentsof the present invention are not limited to the above usage, and suchterms for describing spatial arrangement indicate not only the directionillustrated in a diagram but also another direction in some cases. Forexample, when it is explicitly described that “Y is over X”, it does notnecessarily mean that Y is placed over X, and can include the case whereY is placed under X because a structure in a diagram can be inverted orrotated by 180°. Therefore, the term “over” can refer to the directiondescribed by the term “under” in addition to the direction described bythe term “over”. Note that embodiments of the present invention are notlimited to this, and the term “over” can refer to any of the otherdirections described by the terms “laterally”, “right”, “left”,“obliquely”, “behind”, “front”, “inside”, “outside”, and “in” inaddition to the directions described by the terms “over” and “under”because the device in the diagram can be rotated in a variety ofdirections. That is, the terms for describing spatial arrangement can beconstrued adequately depending on the situation.

Note that when it is explicitly described that “Y is formed on X” or “Yis formed over X”, it does not necessarily mean that Y is formed indirect contact with X. The description includes the case where X and Yare not in direct contact with each other, i.e., the case where anotherobject is interposed between X and Y. Here, each of X and Y is an object(e.g., a device, an element, a circuit, a wiring, an electrode, aterminal, a conductive film, or a layer).

Therefore, for example, when it is explicitly described that “a layer Yis formed on (or over) a layer X”, it includes both the case where thelayer Y is formed in direct contact with the layer X, and the case whereanother layer (e.g., a layer Z) is formed in direct contact with thelayer X and the layer Y is formed in direct contact with the layer Z.Note that another layer (e.g., a layer Z) may be a single layer or aplurality of layers.

In a similar manner, when it is explicitly described that “Y is formedabove X”, it does not necessarily mean that Y is formed in directcontact with X, and another object may be interposed therebetween.Therefore, for example, when it is described that “a layer Y is formedabove a layer X”, it includes both the case where the layer Y is formedin direct contact with the layer X, and the case where another layer(e.g., a layer Z) is formed in direct contact with the layer X and thelayer Y is formed in direct contact with the layer Z. Note that anotherlayer (e.g., a layer Z) may be a single layer or a plurality of layers.

Note that when it is explicitly described that “Y is formed on X”, “Y isformed over X”, or “Y is formed above X”, it includes the case where Yis formed obliquely over/above X.

Note that the same can be said when it is described that “Y is formedunder X” or “Y is formed below X”.

In one embodiment of the present invention, a first transistor, a secondtransistor, a first switch, a second switch, and a third switch areprovided. A first terminal of the first transistor is connected to afirst wiring. A second terminal of the first transistor is connected toa second wiring. A first terminal of the second transistor is connectedto the first wiring. A second terminal of the second transistor isconnected to a gate of the first transistor. A gate of the secondtransistor is connected to the first wiring. The first switch isconnected between the second wiring and a third wiring. The secondswitch is connected between the second wiring and the third wiring. Thethird switch is connected between the gate of the first transistor andthe third wiring.

Note that in one embodiment of the present invention, a first period anda second period can be provided. In the first period, the first to thirdswitches can be turned off. Further, a potential of the first wiring canbecome an H level. In the second period, the first switch can be turnedoff, and the second and third switches can be turned on. Furthermore,the potential of the first wiring can become an L level.

In one embodiment of the present invention, deterioration can besuppressed in a semiconductor device including first and secondtransistors and first to third switches because the length of timeduring which the first and second transistors and the first to thirdswitches are on or the number of times the first and second transistorsand the first to third switches are turned on can be reduced.Alternatively, deterioration can be suppressed in a semiconductor deviceincluding first to fifth transistors because the length of time duringwhich the first to fifth transistors are on or the number of times thefirst to fifth transistors are turned on can be reduced. Alternatively,in the semiconductor device further including a sixth transistor,deterioration can be suppressed because the length of time during whichthe first to sixth transistors are on or the number of times the firstto sixth transistors are turned on can be reduced. Alternatively, in thesemiconductor device further including a seventh transistor,deterioration can be suppressed because the length of time during whichthe first to seventh transistors are on or the number of times the firstto seventh transistors are turned on can be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1D are a circuit diagram, a logic circuit, a logicalexpression, and a truth table in a semiconductor device in Embodiment 1;

FIGS. 2A to 2C are schematic views for illustrating operation of thesemiconductor device in Embodiment 1;

FIGS. 3A to 3C are schematic views for illustrating operation of thesemiconductor device in Embodiment 1;

FIGS. 4A to 4C are schematic views for illustrating operation of thesemiconductor device in Embodiment 1;

FIGS. 5A to 5I are circuit diagrams of the semiconductor device inEmbodiment 1;

FIGS. 6A to 6F are circuit diagrams of the semiconductor device inEmbodiment 1;

FIGS. 7A to 7E are circuit diagrams of the semiconductor device inEmbodiment 1;

FIGS. 8A to 8F are circuit diagrams of the semiconductor device inEmbodiment 1;

FIGS. 9A to 9H are circuit diagrams of the semiconductor device inEmbodiment 1;

FIGS. 10A to 10C are circuit diagrams of a semiconductor device inEmbodiment 2;

FIGS. 11A to 11F are circuit diagrams of the semiconductor device inEmbodiment 1;

FIGS. 12A to 12D are circuit diagrams of the semiconductor device inEmbodiment 1;

FIGS. 13A to 13D are a circuit diagram, a logic circuit, a logicalexpression, and a truth table in the semiconductor device in Embodiment1;

FIGS. 14A to 14C are a circuit diagram of the semiconductor device inEmbodiment 2 and schematic views for illustrating operation of thesemiconductor device;

FIGS. 15A to 15C are timing charts for illustrating operation of thesemiconductor device in Embodiment 2;

FIGS. 16A to 16C are a circuit diagram of the semiconductor device inEmbodiment 2 and schematic views for illustrating operation of thesemiconductor device;

FIGS. 17A and 17B are a circuit diagram of the semiconductor device inEmbodiment 2 and a timing chart for illustrating operation of thesemiconductor device;

FIGS. 18A and 18B are schematic views for illustrating operation of thesemiconductor device in Embodiment 2;

FIGS. 19A to 19C are schematic views for illustrating operation of thesemiconductor device in Embodiment 2;

FIGS. 20A to 20C are a circuit diagram of the semiconductor device inEmbodiment 2 and schematic views for illustrating operation of thesemiconductor device;

FIGS. 21A and 21B are a circuit diagram of the semiconductor device inEmbodiment 2 and a timing chart for illustrating operation of thesemiconductor device;

FIGS. 22A and 22B are schematic views for illustrating operation of thesemiconductor device in Embodiment 2;

FIGS. 23A and 23B are a circuit diagram of the semiconductor device inEmbodiment 2 and a schematic view for illustrating operation of thesemiconductor device;

FIGS. 24A and 24B are schematic views for illustrating operation of thesemiconductor device in Embodiment 2;

FIGS. 25A and 25B are a circuit diagram of the semiconductor device inEmbodiment 2 and a timing chart for illustrating operation of thesemiconductor device;

FIGS. 26A and 26B are schematic views for illustrating operation of thesemiconductor device in Embodiment 2;

FIGS. 27A to 27C are circuit diagrams of the semiconductor device inEmbodiment 2;

FIGS. 28A to 28C are circuit diagrams of the semiconductor device inEmbodiment 2;

FIGS. 29A to 29C are circuit diagrams of the semiconductor device inEmbodiment 2;

FIGS. 30A to 30C are circuit diagrams of the semiconductor device inEmbodiment 2;

FIGS. 31A to 31C are circuit diagrams of the semiconductor device inEmbodiment 2 and a timing chart for illustrating operation of thesemiconductor device;

FIGS. 32A and 32B are a circuit diagram of the semiconductor device inEmbodiment 2 and a timing chart for illustrating operation of thesemiconductor device;

FIGS. 33A to 33E are block diagrams of a display device in Embodiment 3and a circuit diagram of a pixel;

FIG. 34 is a circuit diagram of a shift register in Embodiment 3;

FIG. 35 is a timing chart for illustrating operation of the shiftregister in Embodiment 3;

FIGS. 36A to 36D are a circuit diagram of a signal line driver circuitin Embodiment 4, a timing chart for illustrating operation of the signalline driver circuit, and block diagrams of display devices;

FIGS. 37A to 37G are circuit diagrams of a protection circuit inEmbodiment 5;

FIGS. 38A and 38B are circuit diagrams of the protection circuit inEmbodiment 5;

FIGS. 39A to 39C are cross-sectional views of a semiconductor device inEmbodiment 6;

FIGS. 40A to 40C are a top view and cross-sectional views of a displaydevice in Embodiment 7;

FIGS. 41A to 41E are cross-sectional views for illustrating steps ofmanufacturing a transistor in Embodiment 8;

FIG. 42 is a layout diagram of a semiconductor device in Embodiment 9;

FIGS. 43A to 43H are diagrams for illustrating electronic devices inEmbodiment 10;

FIGS. 44A to 44H are diagrams for illustrating electronic devices inEmbodiment 10;

FIGS. 45A and 45B are circuit diagrams of the semiconductor device inEmbodiment 1;

FIGS. 46A and 46B are circuit diagrams of the semiconductor device inEmbodiment 1; and

FIGS. 47A and 47B are circuit diagrams of the semiconductor device inEmbodiment 2.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments will be described with reference to thedrawings. Note that the embodiments can be implemented in variousdifferent ways and it will be readily appreciated by those skilled inthe art that modes and details of the embodiments can be changed invarious ways without departing from the spirit and scope of the presentinvention. Therefore, the present invention should not be construed asbeing limited to the following description of the embodiments. Note thatin structures described below, the same portions or portions havingsimilar functions are denoted by common reference numerals in differentdrawings, and description thereof is not repeated.

Embodiment 1

The structure of this embodiment is described with reference to FIG.45A. FIG. 45A is a circuit diagram of a semiconductor device in thisembodiment.

A circuit 100 includes a transistor 101 (a first transistor), a switch102S (a first switch), a switch 103S (a second switch), a transistor 104(a second transistor), and a switch 105S (a third switch).

Note that each of the transistor 101 and the transistor 104 is ann-channel transistor. The n-channel transistor is turned on when apotential difference (V_(gs)) between a gate and a source exceeds thethreshold voltage (V_(th)). However, this embodiment is not limited tothis. Each of the transistor 101 and the transistor 104 can be ap-channel transistor. The p-channel transistor is turned on when apotential difference (V_(gs)) between a gate and a source is lower thanthe threshold voltage (V_(th)).

A first terminal of the transistor 101 is connected to a wiring 112 (afirst wiring). A second terminal of the transistor 101 is connected to awiring 111 (a second wiring). The switches 102S and 103S are connectedbetween the wiring 111 and a wiring 115 (a third wiring). A firstterminal of the transistor 104 is connected to the wiring 112. A secondterminal of the transistor 104 is connected to a gate of the transistor101. A gate of the transistor 104 is connected to the wiring 112. Theswitch 1055 is connected between the wiring 115 and the gate of thetransistor 101.

Note that each of the switch 102S, the switch 103S, and the switch 1055can have a control terminal. FIG. 45B illustrates a structure in thecase where a control terminal of the switch 102S is connected to awiring 114 (a fourth wiring) and a control terminal of the switch 103Sand a control terminal of the switch 1055 are connected to a wiring 113(a fifth wiring).

Note that transistors can be used as the switch 102S, the switch 103S,and the switch 1055. In FIG. 1A, transistors are used as switches. Anexample where a transistor 102 (a third transistor), a transistor 103 (afourth transistor), and a transistor 105 (a fifth transistor) are usedas the switch 102S, the switch 103S, and the switch 1055, respectively,is described. A first terminal of the transistor 102 is connected to thewiring 115. A second terminal of the transistor 102 is connected to thewiring 111. A gate of the transistor 102 is connected to the wiring 114.A first terminal of the transistor 103 is connected to the wiring 115. Asecond terminal of the transistor 103 is connected to the wiring 111. Agate of the transistor 103 is connected to the wiring 113. A firstterminal of the transistor 105 is connected to the wiring 115. A secondterminal of the transistor 105 is connected to the gate of thetransistor 101. A gate of the transistor 105 is connected to the wiring113.

Note that each of the transistor 102, the transistor 103, and thetransistor 105 is an re-channel transistor like the transistor 101.However, each of the transistor 102, the transistor 103, and thetransistor 105 may be a p-channel transistor.

Note that a portion where the gate of the transistor 101 and the secondterminal of the transistor 104 are connected to each other or a portionwhere the gate of the transistor 101 and the second terminal of thetransistor 105 are connected to each other is denoted by a node 11.

Next, examples of signals or voltages which are input to or output fromthe wirings 111 to 115 and the functions of these wirings are described.

A signal OUT is output from the wiring 111.

A signal IN1 is input to the wiring 112. A signal IN2 is input to thewiring 113. A signal IN3 is input to the wiring 114.

A voltage V₁ is supplied to the wiring 115. The voltage V₁ is powersupply voltage, reference voltage, ground voltage, a ground, or negativepower supply voltage. Note that this embodiment is not limited to this.A signal (e.g., a clock signal or an inverted clock signal) may be inputto the wiring 115.

An L-level signal, an L signal, an L-level potential, the voltage V₁, orthe like has a potential of approximately V₁. An H-level signal, an Hsignal, an H-level potential, a voltage V₂, or the like has a potentialof approximately V₂ (V₂>V₁). Note that the term “approximately” is usedin consideration of various kinds of variation such as variation due tonoise, variation due to process variation, variation due to steps ofmanufacturing an element, and/or measurement deviation (the same can besaid hereinafter).

For example, when a gate of a transistor is connected to a node and apotential of the node becomes an L level, the transistor is turned off(or on). In this case, the case where the potential of the node becomesan L level means that the transistor can be turned off (or on) with thepotential of the node. Alternatively, the case where the potential ofthe node becomes an L level means that gate-source voltage (V_(gs)) ofthe transistor can be lowered (or raised) so that a circuit includingthe transistor can conduct predetermined operation with the potential ofthe node.

Note that when a clock signal is used as each of the signals IN1 to IN3,the clock signal can be either a balanced signal or an unbalancedsignal. A balanced signal is a signal whose period during which thesignal is at an H level and whose period during which the signal is atan L level in one cycle have approximately the same length. Anunbalanced signal is a signal whose period during which the signal is atan H level and whose period during which the signal is at an L level inone cycle have different lengths.

For example, a clock signal is used as the signal IN1, a signal which isapproximately 180° out of phase from the signal IN1 is used as thesignal IN2, and the signal IN1 and the signal IN2 are unbalanced. Inthis case, the signal IN2 is not a signal obtained by inversion of thesignal IN1 in some cases.

Here, as illustrated in FIG. 5A, signals or voltages are supplied from acircuit 150 to the wirings 112 to 115. The circuit 150 generatessignals, voltages, or the like and supplies the signals or voltages tothe wirings 112 to 115.

The circuit 150 can include circuits 151 to 154. The circuit 151 has afunction of generating a signal or voltage and supplying it to thewiring 112. The circuit 152 has a function of generating a signal orvoltage and supplying it to the wiring 113. The circuit 153 has afunction of generating a signal or voltage and supplying it to thewiring 114. The circuit 154 has a function of generating a signal orvoltage and supplying it to the wiring 115.

The circuits 150 to 154 include an amplifier circuit in FIG. 5B, abipolar transistor in FIG. 5C, a MOS transistor in FIG. 5D, a capacitorin FIG. 5E, an inverter in FIG. 5F, a DC voltage source in FIG. 5G, anAC voltage source in FIG. 5H, and/or a direct current source in FIG. 5I,for example.

As illustrated in FIG. 5A, a protection circuit 160 is connected to thewirings 112 to 114.

Next, the functions of the circuit 100 and the transistors 101 to 105are described.

The circuit 100 has a function of controlling a potential of the wiring111. Alternatively, the circuit 100 has a function of controlling timingof supplying a potential of the wiring 112, a potential of the wiring113, a potential of the wiring 114, or a potential of the wiring 115 tothe wiring 111. Alternatively, the circuit 100 has a function ofcontrolling timing of supplying a signal or voltage to the wiring 111.Alternatively, the circuit 100 has a function of controlling timing ofsupplying an H-level signal or the voltage V₂ to the wiring 111.Alternatively, the circuit 100 has a function of controlling timing ofsupplying an L-level signal or the voltage V₁ to the wiring 111.Alternatively, the circuit 100 has a function of controlling timing ofraising the potential of the wiring 111. Alternatively, the circuit 100has a function of controlling timing of lowering the potential of thewiring 111. Alternatively, the circuit 100 has a function of controllingtiming of keeping the potential of the wiring 111. As described above,the circuit 100 functions as a control circuit. Note that the circuit100 does not need to have all the above functions. The circuit 100 iscontrolled in response to the signals IN1 to IN3.

Note that the circuit 100 functions as a logic circuit including an AND,as illustrated in FIG. 1B. Specifically, the circuit 100 functions as alogic circuit where a three-input AND is combined with two NOTs. Thesignal IN1 is input to a first input terminal of the AND. A signalobtained by inversion of the signal IN2 with a first NOT is input to asecond input terminal of the AND. A signal obtained by inversion of thesignal IN3 with a second NOT is input to a third input terminal of theAND. The signal OUT is output from an output of the AND. In other words,the circuit 100 has a function of realizing a logical expressionillustrated in FIG. 1C or a function of realizing a truth tableillustrated in FIG. 1D.

The transistor 101 has a function of controlling conduction between thewiring 112 and the wiring 111. Alternatively, the transistor 101 has afunction of controlling timing of supplying the potential of the wiring112 to the wiring 111. Alternatively, the transistor 101 has a functionof controlling timing of supplying a signal or voltage which is to beinput to the wiring 112 to the wiring 111 when the signal or voltage isinput to the wiring 112. Alternatively, the transistor 101 has afunction of controlling timing of supplying an H-level signal or thevoltage V₂ to the wiring 111. Alternatively, the transistor 101 has afunction of controlling timing of supplying an L-level signal or thevoltage V₁ to the wiring 111. Alternatively, the transistor 101 has afunction of controlling timing of raising the potential of the wiring111. Alternatively, the transistor 101 has a function of controllingtiming of lowering the potential of the wiring 111. Alternatively, thetransistor 101 has a function of performing bootstrap operation.Alternatively, the transistor 101 has a function of raising a potentialof the node 11 by bootstrap operation. As described above, thetransistor 101 functions as a switch or a buffer. Note that thetransistor 101 does not need to have all the above functions.

The transistor 102 has a function of controlling conduction between thewiring 115 and the wiring 111. Alternatively, the transistor 102 has afunction of controlling timing of supplying the potential of the wiring115 to the wiring 111. Alternatively, the transistor 102 has a functionof controlling timing of supplying a signal or voltage which is to beinput to the wiring 115 to the wiring 111 when the signal or voltage isinput to the wiring 115. Alternatively, the transistor 102 has afunction of controlling timing of supplying an L-level signal or thevoltage V₁ to the wiring 111. Alternatively, the transistor 102 has afunction of controlling timing of lowering the potential of the wiring111. As described above, the transistor 102 functions as a switch. Notethat the transistor 102 does not need to have all the above functions.The transistor 102 can be controlled by the potential of the wiring 114(the signal IN3).

The transistor 103 has a function of controlling conduction between thewiring 115 and the wiring 111. Alternatively, the transistor 103 has afunction of controlling timing of supplying the potential of the wiring115 to the wiring 111. Alternatively, the transistor 103 has a functionof controlling timing of supplying a signal or voltage which is to beinput to the wiring 115 to the wiring 111 when the signal or voltage isinput to the wiring 115. Alternatively, the transistor 103 has afunction of controlling timing of supplying an L-level signal or thevoltage V₁ to the wiring 111. Alternatively, the transistor 103 has afunction of controlling timing of lowering the potential of the wiring111. As described above, the transistor 103 functions as a switch. Notethat the transistor 103 does not need to have all the above functions.The transistor 103 can be controlled by the potential of the wiring 113(the signal IN2).

The transistor 104 has a function of controlling conduction between thewiring 112 and the node 11. Alternatively, the transistor 104 has afunction of controlling timing of supplying the potential of the wiring112 to the node 11. Alternatively, the transistor 104 has a function ofcontrolling timing of supplying a signal or voltage which is to be inputto the wiring 112 to the node 11 when the signal or voltage is input tothe wiring 112. Alternatively, the transistor 104 has a function ofcontrolling timing of supplying an H-level signal or the voltage V₂ tothe node 11. Alternatively, the transistor 104 has a function ofcontrolling timing of raising the potential of the node 11.Alternatively, the transistor 104 has a function of making the node 11be in a floating state. As described above, the transistor 104 functionsas a switch, a diode, a diode-connected transistor, or the like. Notethat the transistor 104 does not need to have all the above functions.The transistor 104 can be controlled by the potential of the wiring 112(the signal IN1) and/or the potential of the node 11.

The transistor 105 has a function of controlling conduction between thewiring 115 and the node 11. Alternatively, the transistor 105 has afunction of controlling timing of supplying the potential of the wiring115 to the node 11. Alternatively, the transistor 105 has a function ofcontrolling timing of supplying a signal or voltage which is to be inputto the wiring 115 to the node 11 when the signal or voltage is input tothe wiring 115. Alternatively, the transistor 105 has a function ofcontrolling timing of supplying an L-level signal or the voltage V₁ tothe node 11. Alternatively, the transistor 105 has a function ofcontrolling timing of lowering the potential of the node 11. Asdescribed above, the transistor 105 functions as a switch. Note that thetransistor 105 does not need to have all the above functions. Thetransistor 105 can be controlled by the potential of the wiring 113 (thesignal IN2).

Next, the operation of the circuit 100 is described with reference tothe truth table (also referred to as the operation table) in FIG. 1D.FIG. 1D illustrates a truth table when the signals IN1 to IN3 aredigital signals. Therefore, there are eight combinations of the H levelsand L levels of the signals IN1 to IN3. That is, the circuit 100 canperform at least eight patterns of operation. Here, the eight patternsof the operation are described.

Note that the circuit 100 does not need to perform all the eightpatterns of the operation and can selectively perform some of thepatterns of the operation. The circuit 100 can perform operation otherthan the eight patterns of the operation. For example, in the case whereeach of the signals IN1 to IN3 has three or more values or is an analogsignal, the circuit 100 can perform different operation in addition tothe eight patterns of the operation.

First, first operation of the circuit 100 is described with reference toFIG. 2A. Since the signal IN2 becomes an H level, the transistor 105 isturned on. Then, the wiring 115 and the node 11 are brought intoconduction, so that the potential of the wiring 115 (e.g., the voltageV₁) is supplied to the node 11. In this case, since the signal IN1 isset at an H level, the transistor 104 is turned on. Then, the wiring 112and the node 11 are brought into conduction, so that the potential ofthe wiring 112 (e.g., the signal IN1 at an H level) is supplied to thenode 11. That is, the potential of the wiring 115 (e.g., the voltage V₁)and the potential of the wiring 112 (e.g., the signal IN1 at an H level)are supplied to the node 11. Here, the channel width of the transistor105 is larger than the channel width of the transistor 104. Thus, thepotential of the node 11 becomes an L level. The potential of the node11 in this case is higher than V₁ and lower than V₁+V_(th) 101 (V_(th)101 is the threshold voltage of the transistor 101). Accordingly, thetransistor 101 is turned off, so that the wiring 112 and the wiring 111are brought out of conduction.

Then, the signal IN2 is set at an H level, so that the transistor 103 isturned on. In this case, since the signal IN3 is set at an H level, thetransistor 102 is turned on. After that, the wiring 115 and the wiring111 are brought into conduction, so that the potential of the wiring 115(e.g., the voltage V₁) is supplied to the wiring 111. Thus, thepotential of the wiring 111 becomes V₁, so that the signal OUT is set atan L level.

Note that description “the channel width of a transistor A is largerthan the channel width of a transistor B” can be replaced withdescription “1/W (W represents channel width) of the transistor A issmaller than 1/W of the transistor B”, “L (L represents channel length)of the transistor A is smaller than L of the transistor B”, “1/L of thetransistor A is larger than 1/L of the transistor B”, “W/L of thetransistor A is larger than W/L of the transistor B”, “V_(gs) (V_(gs)represents a potential difference between a gate and a source) of thetransistor A is higher than V_(gs) of the transistor B”, or the like. Inthe case where the transistor has a multi-gate structure and has aplurality of gates, the description “the channel width of a transistor Ais larger than the channel width of a transistor B” can be replaced withdescription “the number of gates of the transistor A is smaller than thenumber of gates of the transistor B” or “the reciprocal of the number ofgates of the transistor A is larger than the reciprocal of the number ofgates of the transistor B”.

Next, second operation of the circuit 100 is described with reference toFIG. 2B. The second operation differs from the first operation in thatthe signal IN3 is set at an L level. Thus, the signal IN3 becomes an Llevel, so that the transistor 102 is turned off. Note that although thetransistor 102 is turned off, the transistor 103 is turned on as in thefirst operation. In other words, the wiring 115 and the wiring 111 arebrought into conduction as in the first operation, so that the potentialof the wiring 115 (e.g., the voltage V₁) is supplied to the wiring 111.Thus, the potential of the wiring 111 becomes V₁, so that the signal OUTis set at an L level.

Next, third operation of the circuit 100 is described with reference toFIG. 2C. Since the signal IN2 is set at an L level, the transistor 105is turned off. Then, the wiring 115 and the node 11 are brought out ofconduction. In this case, since the signal IN1 is set at an H level, thetransistor 104 is turned on. Then, the wiring 112 and the node 11 arebrought into conduction, so that the potential of the wiring 112 (e.g.,the signal IN1 at an H level) is supplied to the node 11. That is, thepotential of the wiring 112 (e.g., the signal IN1 at an H level) issupplied to the node 11. Then, the potential of the node 11 starts torise. When the potential of the node 11 becomes V₁+V_(th) 101+V_(a)(V_(a) is positive voltage), the transistor 101 is turned on. Afterthat, the wiring 112 and the wiring 111 are brought into conduction, sothat the potential of the wiring 112 (e.g., the signal IN1 at an Hlevel) is supplied to the wiring 111. Then, the potential of the node 11continuously rises. When the potential of the node 11 becomes V₂−V_(th)104 (V_(th) 104 is the threshold voltage of the transistor 104), thetransistor 104 is turned off. Then, the wiring 112 and the node 11 arebrought out of conduction. Accordingly, the node 11 is made to be in afloating state while keeping its potential at V₂−V_(th) 104.

Then, the signal IN2 is set at an L level, so that the transistor 103 isturned off. In this case, since the signal IN3 is set at an H level, thetransistor 102 is turned on. After that, the wiring 115 and the wiring111 are brought into conduction, so that the potential of the wiring 115(e.g., the voltage V₁) is supplied to the wiring 111. That is, thepotential of the wiring 115 (e.g., the voltage V₁) and the potential ofthe wiring 112 (e.g., the signal IN1 at an H level) are supplied to thewiring 111. Here, the channel width of the transistor 102 is larger thanthe channel width of the transistor 101. Thus, the potential of thewiring 111 becomes an L level. The potential of the wiring 111 in thiscase is lower than the sum of the voltage V₁ and the threshold voltageof one of the transistors 101 to 105. Accordingly, the potential of thewiring 111 becomes an L level, so that the signal OUT is set at an Llevel.

Next, fourth operation of the circuit 100 is described with reference toFIG. 3A. The fourth operation differs from the third operation in thatthe signal IN3 is set at an L level. Thus, the signal IN3 is set at an Llevel, so that the transistor 102 is turned off. In this case, thetransistor 103 is also turned off, so that the wiring 115 and the wiring111 are brought out of conduction. That is, the potential of the wiring112 (e.g., the signal IN1 at an H level) is supplied to the wiring 111.Thus, the potential of the wiring 111 starts to rise. In this case, thenode 11 is in a floating state. Then, the potential of the node 11 israised by capacitive coupling between the gate and the second terminalof the transistor 101. Accordingly, the potential of the node 11 becomesV₂+V_(th) 101+V_(a). This is so-called bootstrap operation. Thus, thepotential of the wiring 111 becomes V₂, so that the signal OUT is set atan H level.

Next, fifth operation of the circuit 100 is described with reference toFIG. 3B. Since the signal IN2 is set at an H level, the transistor 105is turned on. Then, the wiring 115 and the node 11 are brought intoconduction, so that the potential of the wiring 115 (e.g., the voltageV₁) is supplied to the node 11. In this case, since the signal IN1 isset at an L level, the transistor 104 is turned off. Then, the wiring112 and the node 11 are brought out of conduction. That is, thepotential of the wiring 115 (e.g., the voltage V₁) is supplied to thenode 11. Thus, the potential of the node 11 becomes V₁. Then, thetransistor 101 is turned off, so that the wiring 112 and the wiring 111are brought out of conduction.

Then, the signal IN2 is set at an H level, so that the transistor 103 isturned on. In this case, since the signal IN3 is set at an H level, thetransistor 102 is turned on. After that, the wiring 115 and the wiring111 are brought into conduction, so that the potential of the wiring 115(e.g., the voltage V₁) is supplied to the wiring 111. Thus, thepotential of the wiring 111 becomes V₁, so that the signal OUT is set atan L level.

Next, sixth operation of the circuit 100 is described with reference toFIG. 3C. The sixth operation differs from the fifth operation in thatthe signal IN3 is set at an L level. Thus, the signal IN3 is set at an Llevel, so that the transistor 102 is turned off. Note that although thetransistor 102 is turned off, the transistor 103 is turned on as in thefifth operation. In other words, the wiring 115 and the wiring 111 arebrought into conduction as in the fifth operation, so that the potentialof the wiring 115 (e.g., the voltage V₁) is supplied to the wiring 111.Thus, the potential of the wiring 111 becomes V₁, so that the signal OUTis set at an L level.

Next, seventh operation of the circuit 100 is described with referenceto FIG. 4A. Since the signal IN2 is set at an L level, the transistor105 is turned off. Then, the wiring 115 and the node 11 are brought outof conduction. In this case, since the signal IN1 is set at an L level,the transistor 104 is turned off. Then, the wiring 112 and the node 11are brought out of conduction. That is, since the node 11 is made to bein a floating state, the potential in the previous state is held. Here,the potential of the node 11 is lower than V₁+V_(th) 101. Thus, thetransistor 101 is turned off, so that the wiring 112 and the wiring 111are brought out of conduction.

Then, the signal IN2 is set at an L level, so that the transistor 103 isturned off. In this case, since the signal IN3 is set at an H level, thetransistor 102 is turned on. After that, the wiring 115 and the wiring111 are brought into conduction, so that the potential of the wiring 115(e.g., the voltage V₁) is supplied to the wiring 111. Thus, thepotential of the wiring 111 becomes V₁, so that the signal OUT is set atan L level.

Next, eighth operation of the circuit 100 is described with reference toFIG. 4B. The eighth operation differs from the seventh operation in thatthe signal IN3 is set at an L level. Thus, the signal IN3 is set at an Llevel, so that the transistor 102 is turned off. In this case, thetransistor 103 is also turned off, so that the wiring 115 and the wiring111 are brought out of conduction. That is, the wiring 111 is made to bein an indefinite state Z (a floating state or a high impedance state).Therefore, when the potential does not fluctuate due to noise or thelike, the potential of the wiring 111 is kept at the level in theprevious state. Thus, for example, when a preceding operation of theeighth operation is one of the first operation, the second operation,the third operation, the fifth operation, the sixth operation, and theseventh operation, the signal OUT is set at an L level. Alternatively,for example, when the preceding operation of the eighth operation is thefourth operation, the signal OUT is set at an H level.

As described above, the transistors 101 to 105 are turned off in any ofthe first to eighth operations. Thus, the length of time during whichthe transistors are on or the number of times the transistors are on canbe reduced, so that deterioration of the transistors can be suppressed.Accordingly, deterioration in characteristics (e.g., the increase in thethreshold voltage or the decrease in mobility) of the transistors can besuppressed.

Alternatively, since deterioration of the transistors can be suppressedor all the transistors that are included in the circuit 100 can ben-channel transistors, a material which deteriorates more easily than asingle crystal semiconductor (e.g., a non-single-crystal semiconductorsuch as an amorphous semiconductor or a microcrystalline semiconductor,an organic semiconductor, or an oxide semiconductor) can be used forsemiconductor layers of the transistors. Therefore, the number of stepscan be reduced, yield can be increased, and/or manufacturing cost can bereduced, for example. Alternatively, for example, when the semiconductordevice of this embodiment is used for a display device, the displaydevice can be made large.

Alternatively, it is not necessary to make the channel widths of thetransistors large considering the case where the transistorsdeteriorate. Alternatively, since V_(gs) of the transistors can be madehigh by bootstrap operation, the channel widths of the transistors canbe made small. Alternatively, since the amplitude of an output signalcan be the same as that of power supply voltage or a signal, theamplitude of the output signal can be increased. Therefore, the channelwidth of a transistor which is controlled with the output signal can bemade small. In other words, since the channel width of the transistorcan be made small, the area of a channel of the transistor can bedecreased.

Alternatively, since the area of the channel of the transistor can bedecreased, a layout area can be decreased. Accordingly, for example,when the semiconductor device of this embodiment is used for a displaydevice, the display device can have higher resolution or the frame ofthe display device can be narrowed.

Alternatively, since the area of the channel of the transistor can bedecreased, the area of a portion where a material used for a gate and asemiconductor layer overlap with each other with an insulating layertherebetween can be decreased. Accordingly, short-circuit between thematerial used for the gate and the semiconductor layer can besuppressed. Thus, variation in output signals can be reduced,malfunctions can be prevented, and/or yield can be increased, forexample.

Alternatively, all the transistors can be n-channel transistors orp-channel transistors. Therefore, reduction in the number of steps,improvement in yield, improvement in reliability, or reduction in costcan be achieved more efficiently as compared to a CMOS circuit. Inparticular, when all the transistors are n-channel transistors, anon-single-crystal semiconductor such as an amorphous semiconductor or amicrocrystalline semiconductor, an organic semiconductor, or an oxidesemiconductor can be used for semiconductor layers of the transistors.Transistors including such semiconductor layers easily deteriorate.However, in the semiconductor device of this embodiment, deteriorationof the transistors can be suppressed.

Next, in addition to the first to eighth operations, operation which canbe performed by the circuit 100 is described.

First, by making the channel width of the transistor 104 larger than thechannel width of the transistor 105 in the first operation and thesecond operation, the transistor 101 can be turned on. Then, the wiring112 and the wiring 111 are brought into conduction, so that thepotential of the wiring 112 (e.g., the signal IN1 at an H level) issupplied to the wiring 111. That is, the potential of the wiring 115(e.g., the voltage V₁) and the potential of the wiring 112 (e.g., thesignal IN1 at an H level) are supplied to the wiring 111. In this case,by decreasing the current supply capability of the transistor 101 andmaking the potential of the wiring 111 slightly higher than V₁, thesignal OUT can be set at an L level. Therefore, it is preferable thatthe channel width of the transistor 101 be smaller than the channelwidth of the transistor 102 or the channel width of the transistor 103.Alternatively, it is preferable that V_(gs) of the transistor 101 belower than V₂−V₁. It is much preferable that V_(gs) of the transistor101 be lower than (V₂−V₁)×½. For example, by controlling V_(gs) of thetransistor 101, analog voltage can be output from the wiring 111. Thatis, the circuit 100 can function as an analog buffer, an amplifiercircuit, or the like. As another example, by making the channel width ofthe transistor 101 larger than the sum of the channel width of thetransistor 102 and the channel width of the transistor 103, the signalOUT can be set at an H level.

Next, the signal IN1 is changed from an H level to an L level and thesignal IN2 is changed from an L level to an H level, so that theoperation is changed from the fourth operation to the sixth operation.In this case, as illustrated in FIG. 4C, by making the transistor 101 onfor a period of time in the sixth operation, the potential of the wiring112 (e.g., the signal IN1 at an L level) can be supplied to the wiring111. Accordingly, the fall time of the signal OUT can be shortened. Inorder to realize this, timing of when the transistor 101 is turned offcan be delayed as compared to timing of when the signal IN1 is set at anL level. Alternatively, timing of when the signal IN2 is set at an Hlevel can be delayed as compared to the timing of when the signal IN1 isset at an L level. Alternatively, distortion in the signal IN2 can begreater than that in the signal IN1. Alternatively, the channel width ofthe transistor 105 can be smaller than the channel width of thetransistor 103. Alternatively, one of electrodes of a capacitor can beconnected to the node 11. The other of the electrodes of the capacitorcan be connected to a power supply line or a signal line (e.g., thewiring 115 or the wiring 111). The capacitor can be parasiticcapacitance of a transistor (e.g., the transistor 101, the transistor104, or the transistor 105). Alternatively, a signal can be supplied tothe wiring 113 from a circuit which is formed over the same substrate asthe circuit 100.

Next, in the seventh operation and the eighth operation, the potentialof the node 11 can be V₁+V_(th)+V_(a). In this case, since thetransistor 101 is turned on, the wiring 112 and the wiring 111 arebrought into conduction. Then, the potential of the wiring 112 (e.g.,the signal IN1 at an L level) is supplied to the wiring 111.Accordingly, the potential of the wiring 111 can be fixed at a certainpotential especially in the eighth operation, so that the circuit doesnot easily malfunction.

As described above, in addition to the first to eighth operations, thesemiconductor device of this embodiment can perform a variety ofoperations.

Next, the ratio of the channel widths of the transistors 101 to 105 isdescribed.

A load driven by the transistors 104 and 105 (e.g., the gate of thetransistor 101) is smaller than a load driven by the transistors 101 to103 (e.g., a load connected to the wiring 111 (e.g., a gate of thetransistor)). Therefore, the channel width of the transistor 104 can besmaller than the channel width of the transistor 101, the channel widthof the transistor 102, and/or the channel width of the transistor 103.Alternatively, the channel width of the transistor 105 can be smallerthan the channel width of the transistor 101, the channel width of thetransistor 102, and/or the channel width of the transistor 103. In sucha case, the channel width of the transistor 101 is preferably 20 timesor less the channel width of the transistor 104. More preferably, thechannel width of the transistor 101 is ten times or less the channelwidth of the transistor 104. Further preferably, the channel width ofthe transistor 101 is seven times or less the channel width of thetransistor 104. The channel width of the transistor 101 is preferablyten times or less the channel width of the transistor 105. Morepreferably, the channel width of the transistor 101 is five times orless the channel width of the transistor 105. Further preferably, thechannel width of the transistor 101 is three times or less the channelwidth of the transistor 105.

Next, in the case where the signal OUT is set at an L level, thepotential of the wiring 115 (e.g., the voltage V₁) is supplied to thewiring 111 through the transistor 102 and the transistor 103 in somecases. In contrast, in the case where the signal OUT is set at an Hlevel, the potential of the wiring 112 (e.g., the signal IN1 at an Hlevel) is supplied to the wiring 111 through the transistor 101 in somecases. Therefore, the channel width of the transistor 101 can be smallerthan the channel width of the transistor 102 and/or the channel width ofthe transistor 103. In such a case, the channel width of the transistor101 is preferably three times or less the channel width of thetransistor 102 or the channel width of the transistor 103. Morepreferably, the channel width of the transistor 101 is twice or less thechannel width of the transistor 102 or the channel width of thetransistor 103.

Next, the signal IN1 is set at an H level and the transistor 101 isturned on. At this time, the transistor 102 or the transistor 103 isturned on. In this case, in order to set the potential of the wiring 111at an L level, the channel width of the transistor 102 can be largerthan the channel width of the transistor 101. Alternatively, the channelwidth of the transistor 103 can be larger than the channel width of thetransistor 101. In such a case, the channel width of the transistor 101is preferably the same as or smaller than the channel width of thetransistor 102 or the channel width of the transistor 103. Morepreferably, the channel width of the transistor 101 is 0.7 times or lessthe channel width of the transistor 102 or the channel width of thetransistor 103.

Note that the signal IN1 is set at an H level and the transistor 101 isturned on. In this case, although the transistor 103 is turned on, thetransistor 102 is not likely to be turned on. Thus, the channel width ofthe transistor 103 can be smaller than the channel width of thetransistor 102.

Then, by turning on the transistor 104 and the transistor 105 in thefirst operation and the second operation, the potential of the wiring115 (e.g., the voltage V₁) and the potential of the wiring 112 (e.g.,the signal IN1 at an H level) are supplied to the node 11. Therefore, asdescribed above, in order to set the potential of the node 11 at an Llevel, the channel width of the transistor 105 can be larger than thechannel width of the transistor 104. In such a case, the channel widthof the transistor 105 is preferably 15 times or less the channel widthof the transistor 104. More preferably, the channel width of thetransistor 105 is ten times or less the channel width of the transistor104. Further preferably, the channel width of the transistor 105 iseight times or less the channel width of the transistor 104. Forexample, by making the channel length of the transistor 104 larger thanthe channel length of the transistor 105, W/L of the transistor 105 canbe larger than W/L of the transistor 104. In such a case, the channellength of the transistor 104 is preferably nine times or less thechannel length of the transistor 105. More preferably, the channellength of the transistor 104 is six times or less the channel length ofthe transistor 105. Further preferably, the channel length of thetransistor 104 is three times or less the channel length of thetransistor 105.

As described above, the ratio of the channel widths of the transistorsis preferably set to an appropriate ratio. Note that considering theratio of the size of the transistors, the channel width of thetransistor 101 is preferably 100 to 1000 μm. More preferably, thechannel width of the transistor 101 is 100 to 300 μm or 500 to 800 μm.The channel width of the transistor 102 or the channel width of thetransistor 103 is preferably 100 to 1500 μm. More preferably, thechannel width of the transistor 102 or the channel width of thetransistor 103 is 100 to 300 μm or 700 to 1200 μm. The channel width ofthe transistor 104 is preferably 10 to 300 μm. More preferably, thechannel width of the transistor 104 is 20 to 100 μm. The channel widthof the transistor 105 is preferably 30 to 500 μm. More preferably, thechannel width of the transistor 105 is 50 to 150 μm.

Next, a semiconductor device with a structure which is different fromthat in FIG. 1A is described.

In the structure in FIG. 1A, the first terminal of the transistor 105can be connected to a wiring which is different from the wiring 115(e.g., the wiring 112). Further, the gate of the transistor 105 can beconnected to a wiring which is different from the wiring 113 (e.g., thewiring 111, a wiring 116, or the node 11).

Note that the voltage V₂ can be supplied to the wiring 116. Thus, thewiring 116 can function as a power supply line. For example, a signalcan be input to the wiring 116. Thus, the wiring 116 can function as asignal line.

FIG. 6A illustrates a structure where the first terminal of thetransistor 105 is connected to the wiring 112 in the semiconductordevice in FIG. 1A. An H-level signal can be supplied to the firstterminal of the transistor 105. Thus, a reverse bias can be applied tothe transistor 105, so that deterioration of the transistor 105 can besuppressed.

FIG. 6B illustrates a structure where the first terminal of thetransistor 105 is connected to the wiring 112 and the gate of thetransistor 105 is connected to node 11 in the semiconductor device inFIG. 1A. An H-level signal can be supplied to the first terminal of thetransistor 105. Thus, a reverse bias can be applied to the transistor105, so that deterioration of the transistor 105 can be suppressed.

FIG. 6C illustrates a structure where the first terminal of thetransistor 105 is connected to the wiring 112 and the gate of thetransistor 105 is connected to the wiring 116 in the semiconductordevice in FIG. 1A. The signal IN1 at an H level can be supplied to thenode 11 through the transistor 104 and the transistor 105. Thus, thechannel width of the transistor 104 can be made small.

In the structures in FIG. 1A and FIGS. 6A to 6C, the first terminal ofthe transistor 103 can be connected to a wiring which is different fromthe wiring 115 (e.g., the wiring 112). Further, the gate of thetransistor 103 can be connected to a wiring which is different from thewiring 113 (e.g., the wiring 111, the wiring 116, or the node 11).

FIG. 6D illustrates a structure where the first terminal of thetransistor 103 is connected to the wiring 112 in the semiconductordevice in FIG. 1A. An H-level signal can be supplied to the firstterminal of the transistor 103. Thus, a reverse bias can be applied tothe transistor 103, so that deterioration of the transistor 103 can besuppressed.

FIG. 6E illustrates a structure where the first terminal of thetransistor 103 is connected to the wiring 112 and the gate of thetransistor 103 is connected to wiring 111 in the semiconductor device inFIG. 1A. Thus, a reverse bias can be applied to the transistor 103, sothat deterioration of the transistor 103 can be suppressed.

FIG. 6F illustrates a structure where the first terminal of thetransistor 103 is connected to the wiring 112 and the gate of thetransistor 103 is connected to the wiring 116 in the semiconductordevice in FIG. 1A. The signal IN1 at an H level can be supplied to thewiring 111 through the transistor 103 and the transistor 101. Thus, thechannel width of the transistor 101 can be made small.

In the structures in FIG. 1A and FIGS. 6A to 6F, the first terminal ofthe transistor 104 can be connected to a wiring which is different fromthe wiring 112 (e.g., the wiring 116). Alternatively, the gate of thetransistor 104 can be connected to a wiring which is different from thewiring 112 (e.g., the wiring 116).

FIG. 7A illustrates a structure where the first terminal of thetransistor 104 is connected to the wiring 116 in the semiconductordevice in FIG. 1A.

FIG. 7B illustrates a structure where the gate of the transistor 104 isconnected to the wiring 116 in the semiconductor device in FIG. 1A. Thepotential of the wiring 112 (e.g., the signal IN1 at an L level) can besupplied through the transistor 104. Thus, the potential of the node 11can be fixed at a certain potential, so that a noise-resistantsemiconductor device can be obtained.

In the structures in FIG. 1A, FIGS. 6A to 6F, and FIGS. 7A and 7B, thefirst terminal of the transistor 102 can be connected to a wiring whichis different from the wiring 115 (e.g., the wiring 113, the wiring 114,or the node 11). Alternatively, the first terminal of the transistor 103and/or the first terminal of the transistor 105 can be connected to awiring which is different from the wiring 115 (e.g., the wiring 113, thewiring 114, or the node 11).

FIG. 7C illustrates a structure where the first terminal of thetransistor 102 is connected to the wiring 113 in the semiconductordevice in FIG. 1A. An H-level signal can be supplied to the firstterminal of the transistor 102. Thus, a reverse bias can be applied tothe transistor 102, so that deterioration of the transistor 102 can besuppressed.

FIG. 7D illustrates a structure where the first terminal of thetransistor 103 and the first terminal of the transistor 105 areconnected to the wiring 114 in the semiconductor device in FIG. 1A. AnH-level signal can be supplied to the first terminal of the transistor103 or the first terminal of the transistor 105. Thus, a reverse biascan be applied to the transistor 103 or the transistor 105, so thatdeterioration of the transistor 103 or the transistor 105 can besuppressed.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, and FIGS. 7Ato 7D, terminals or electrodes of the transistors do not need to beconnected to the same wiring. For example, the first terminal of thetransistor 101 and the first terminal of the transistor 104 can beconnected to different wirings. Alternatively, the gate of thetransistor 103 and the gate of the transistor 105 can be connected todifferent wirings. Alternatively, the first terminal of the transistor102, the first terminal of the transistor 103, and the first terminal ofthe transistor 105 can be connected to different wirings. In order torealize such a structure, one wiring can be divided into a plurality ofwirings.

FIG. 7E illustrates a structure where the wiring 112 is divided into aplurality of wirings 112A and 112B, the wiring 113 is divided into aplurality of wirings 113A and 113B, and the wiring 115 is divided into aplurality of wirings 115A to 115C in the semiconductor device in FIG.1A. The first terminal of the transistor 101 is connected to the wiring112A; the first terminal of the transistor 104 is connected to thewiring 112B; and the gate of the transistor 104 is connected to thewiring 112B. Alternatively, the gate of the transistor 103 is connectedto the wiring 113A, and the gate of the transistor 105 is connected tothe wiring 113B. Alternatively, the first terminal of the transistor 102is connected to the wiring 115A; the first terminal of the transistor103 is connected to the wiring 115B; and the first terminal of thetransistor 105 is connected to the wiring 115C.

Note that the wirings 112A and 112B can have functions which are similarto that of the wiring 112. The wirings 113A and 113B can have functionswhich are similar to that of the wiring 113. The wirings 115A to 115Ccan have functions which are similar to that of the wiring 115.Therefore, the signal IN1 can be input to the wirings 112A and 112B. Thesignal IN2 can be input to the wirings 113A and 113B. The voltage V₁ canbe supplied to the wirings 115A to 115C. For example, different voltagesor signals can be supplied to the wirings 112A and 112B. Differentvoltages or signals can be supplied to the wirings 113A and 113B.Different voltages or signals can be supplied to the wirings 115A to115C.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, and FIGS. 7Ato 7E, a transistor 105A and/or a transistor 103A can be additionallyprovided.

FIG. 8A illustrates a structure where the transistor 105A isadditionally provided in the semiconductor device in FIG. 1A. Thetransistor 105A can correspond to the transistor 105 and can have asimilar function. A first terminal of the transistor 105A is connectedto the wiring 112. A second terminal of the transistor 105A is connectedto the node 11. A gate of the transistor 105A is connected to the wiring113. For example, as in FIGS. 6B and 6C, the gate of the transistor 105Acan be connected to the node 11 or the wiring 116. For example, as inFIGS. 6C and 6D, the gate of the transistor 105A can be connected to awiring which is different from the wiring 113 (e.g., the node 11, thewiring 116, or the wiring 111).

FIG. 8B illustrates a structure where the transistor 103A isadditionally provided in the semiconductor device in FIG. 1A. Thetransistor 103A can correspond to the transistor 103 and can have asimilar function. A first terminal of the transistor 103A is connectedto the wiring 112. A second terminal of the transistor 103A is connectedto the wiring 111. A gate of the transistor 103A is connected to thewiring 113. For example, as in FIGS. 6E and 6F, the gate of thetransistor 103A can be connected to a wiring which is different from thewiring 113 (e.g., the wiring 111, the wiring 116, or the node 11).

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, and FIGS. 8A and 8B, a transistor 106 can be additionally provided.

FIG. 8C illustrates a structure where the transistor 106 is additionallyprovided in the semiconductor device in FIG. 1A. The transistor 106 isan n-channel transistor. However, this embodiment is not limited tothis, and the transistor 106 can be a p-channel transistor. A firstterminal of the transistor 106 is connected to the wiring 115. A secondterminal of the transistor 106 is connected to the node 11. A gate ofthe transistor 106 is connected to the wiring 114.

The function of the transistor 106 is described. The transistor 106 hasa function of controlling conduction between the wiring 115 and the node11. Alternatively, the transistor 106 has a function of controllingtiming of supplying the potential of the wiring 115 to the node 11.Alternatively, the transistor 106 has a function of controlling timingof supplying a signal or voltage which is to be input to the wiring 115to the node 11 when the signal or voltage is input to the wiring 115.Alternatively, the transistor 106 has a function of controlling timingof supplying an L-level signal or the voltage V₁ to the node 11.Alternatively, the transistor 106 has a function of controlling timingof lowering the potential of the node 11. As described above, thetransistor 106 can function as a switch. Note that the transistor 106does not need to have all the above functions. The transistor 106 can becontrolled by the potential of the wiring 114 (the signal IN3).

The operation of the semiconductor device in FIG. 8C is described. Infirst operation, third operation, fifth operation, and seventhoperation, the signal IN3 is set at an H level, so that the transistor106 is turned on. Then, the wiring 115 and the node 11 are brought intoconduction, so that the potential of the wiring 115 (e.g., the voltageV₁) is supplied to the node 11. Thus, the potential of the node 11 canbe fixed at a certain potential, so that a noise-resistant semiconductordevice can be obtained. Alternatively, the potential of the node 11 canbe further lowered, so that the transistor 101 is likely to be turnedoff. Alternatively, the channel width of the transistor 105 can be madesmall, so that a layout area can be decreased. In contrast, in secondoperation, fourth operation, sixth operation, and eighth operation, thesignal IN3 is set at an L level, so that the transistor 106 is turnedoff. Therefore, the length of time during which the transistor 106 is oncan be decreased, so that deterioration of the transistor 106 can besuppressed.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, and FIGS. 8A to 8C, the transistor 103 and/or the transistor 105 canbe eliminated.

FIG. 8D illustrates a structure where the transistor 103 is eliminatedfrom the semiconductor device in FIG. 1A. Even in the case where thetransistor 103 is eliminated, for example, by delaying timing of turningoff the transistor 101 as compared to timing of setting the signal IN1at an L level from an H level, the potential of the wiring 112 (e.g.,the signal IN1 at an L level) can be supplied to the wiring 111. Thus,the potential of the wiring 111 can be V₁. In this manner, byelimination of the transistor 103, the number of transistors can bereduced.

Note that in order to delay timing of turning off the transistor 101 ascompared to timing of setting the signal IN1 at an L level from an Hlevel, the channel width of the transistor 105 can be smaller than thechannel width of the transistor 101. Alternatively, the area of thechannel (e.g., L×W) of the transistor 101 can be the largest in thetransistors included in the circuit 100.

FIG. 8E illustrates a structure where the transistor 105 is eliminatedfrom the semiconductor device in FIG. 1A. By elimination of thetransistor 105, the number of transistors can be reduced.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, and FIGS. 8A to 8E, a capacitor 107 can be connected between thegate and the second terminal of the transistor 101. A MOS capacitor canbe used as the capacitor, for example.

FIG. 8F illustrates a structure where the capacitor 107 is connectedbetween the gate and the second terminal of the transistor 101 in thesemiconductor device in FIG. 1A. The potential of the node 11 is likelyto rise in bootstrap operation. Thus, V_(gs) of the transistor 101 canbe increased. Accordingly, the channel width of the transistor 101 canbe made small. Alternatively, the fall time or rise time of the signalOUT can be shortened.

Note that the material of one of electrodes of the capacitor 107 ispreferably a material which is similar to that of a gate of atransistor. Alternatively, the material of the other of the electrodesof the capacitor 107 is preferably a material which is similar to thatof a source or a drain of the transistor. In this manner, a layout areacan be decreased. Alternatively, a capacitance value can be increased.

Note that an area where the one of the electrodes of the capacitor 107overlaps with the other of the electrodes of the capacitor 107 ispreferably smaller than an area where a material used for the gate and asemiconductor layer in the transistor 101 overlap with each other.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, and FIGS. 8A to 8F, a circuit 120 can be additionally provided inthe circuit 100.

FIG. 9A illustrates a structure where the circuit 120 is additionallyprovided in the semiconductor device in FIG. 1A. The circuit 120 isconnected between the wiring 113 and a portion where the gate of thetransistor 103 and the gate of the transistor 105 are connected to eachother. The circuit 120 has a function of delaying the signal IN2 whichis to be input to the wiring 113. Thus, for example, timing of when thepotential of the gate of the transistor 105 rises is delayed as comparedto timing of when the signal IN2 is set at an H level from an L level.In other words, timing of when the transistor 105 is turned on or timingof when the potential of the node 11 is lowered is delayed as comparedto the timing of when the signal IN2 is set at an H level from an Llevel. Therefore, for example, timing of turning off the transistor 101can be delayed as compared to timing of setting the signal IN1 at an Llevel from an H level. Accordingly, the signal IN1 at an L level can besupplied to the wiring 111, so that the fall time of the signal OUT canbe shortened. For example, as illustrated in FIG. 9B, the gate of thetransistor 103 can be connected to the wiring 113 without the circuit120, and the gate of the transistor 105 can be connected to the wiring113 through the circuit 120. This is because the voltage V₁ can bequickly supplied to the wiring 111 when the transistor 103 is quicklyturned on, so that the fall time of the signal OUT can be shortened. Asanother example, the gate of the transistor 105 can be connected to thewiring 111 through the circuit 120. In this case, the gate of thetransistor 103 can be connected to either the gate of the transistor 105or the wiring 113.

Note that any circuit can be used as the circuit 120 as long as itincludes at least a capacitance component and a resistance component.For example, as the circuit 120, a resistor, a capacitor, a transistor,a diode, an element in which these elements are combined with eachother, or a variety of different elements can be used. FIGS. 9C and 9Deach illustrate a structure where the circuit 120 includes a resistor121 and a capacitor 122. As another example, as the circuit 120, abuffer circuit, an inverter circuit, a NAND circuit, a NOR circuit, alevel shifter circuit, a circuit in which these circuits are combinedwith each other, or a variety of different circuits can be used. FIG. 9Eillustrates a structure where the circuit 120 includes a buffer circuit123. FIG. 9F illustrates a structure where the circuit 120 includes aninverter circuit 124.

Note that the capacitance component can be parasitic capacitance and theresistance component can be parasitic resistance. In other words, as thecircuit 120, a wiring, a contact of the material of a layer and thematerial of a different layer, an FPC pad, or the like can be used.Therefore, for example, the wiring resistance of the wiring 113 ispreferably higher than the wiring resistance of the wiring 112. In orderto realize this, the minimum width of the wiring 113 is preferablysmaller than the minimum width of the wiring 112. Alternatively, thewiring 113 can contain a larger amount of the highest-resistantconductive material (e.g., a material including the material of a pixelelectrode) than the wiring 112. Alternatively, for example, when acertain material is used for both the wiring 113 and the wiring 112, theminimum thickness of the material included in the wiring 113 can besmaller than the minimum thickness of the material included in thewiring 112.

Note that for the buffer circuit 123, a structure illustrated in FIG. 9Gcan be used. The buffer circuit includes a transistor 125, a transistor126, a transistor 127, and a transistor 128. A first terminal of thetransistor 125 is connected to a wiring 129. A second terminal of thetransistor 125 is connected to the gate of the transistor 103. A gate ofthe transistor 125 is connected to the wiring 113. A first terminal ofthe transistor 126 is connected to a wiring 130. A second terminal ofthe transistor 126 is connected to the gate of the transistor 103. Afirst terminal of the transistor 127 is connected to the wiring 129. Asecond terminal of the transistor 127 is connected to a gate of thetransistor 126. A gate of the transistor 127 is connected to the wiring129. A first terminal of the transistor 128 is connected to the wiring130. A second terminal of the transistor 128 is connected to the gate ofthe transistor 126. A gate of the transistor 128 is connected to thewiring 113. Note that high voltage such as the voltage V₂ is oftensupplied to the wiring 129, and negative voltage such as the voltage V₁is supplied to the wiring 130.

Note that for the inverter circuit 124, a structure illustrated in FIG.9H can be used. The inverter circuit includes a transistor 131, atransistor 132, a transistor 133, and a transistor 134. A first terminalof the transistor 131 is connected to the wiring 129. A second terminalof the transistor 131 is connected to the gate of the transistor 103. Afirst terminal of the transistor 132 is connected to the wiring 130. Asecond terminal of the transistor 132 is connected to the gate of thetransistor 103. A gate of the transistor 132 is connected to the wiring113. A first terminal of the transistor 133 is connected to the wiring129. A second terminal of the transistor 133 is connected to a gate ofthe transistor 131. A gate of the transistor 133 is connected to thewiring 129. A first terminal of the transistor 134 is connected to thewiring 130. A second terminal of the transistor 134 is connected to thegate of the transistor 131. A gate of the transistor 134 is connected tothe wiring 113.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, FIGS. 8A to 8F, and FIGS. 9A and 9B, the transistors can be replacedwith diodes. For example, the transistors can be diode-connected.

FIG. 11A illustrates a structure where the transistors are replaced withdiodes in the semiconductor device in FIG. 1A. The transistor 101 can bereplaced with a diode 101 d. One of electrodes (e.g., an input terminal)of the diode 101 d is connected to the node 11, and the other of theelectrodes (e.g., an output terminal) of the diode 101 d is connected tothe wiring 111. The transistor 102 can be replaced with a diode 102 d.One of electrodes (e.g., an input terminal) of the diode 102 d isconnected to the wiring 111, and the other of the electrodes (e.g., anoutput terminal) of the diode 102 d is connected to the wiring 114. Thetransistor 103 can be replaced with a diode 103 d. One of electrodes(e.g., an input terminal) of the diode 103 d is connected to the wiring111, and the other of the electrodes (e.g., an output terminal) of thediode 103 d is connected to the wiring 113. The transistor 104 can bereplaced with a diode 104 d. One of electrodes (e.g., an input terminal)of the diode 104 d is connected to the wiring 112, and the other of theelectrodes (e.g., an output terminal) of the diode 104 d is connected tothe node 11. The transistor 105 can be replaced with a diode 105 d. Oneof electrodes (e.g., an input terminal) of the diode 105 d is connectedto the node 11, and the other of the electrodes (e.g., an outputterminal) of the diode 105 d is connected to the wiring 113. In thismanner, the number of signals or power sources can be reduced. That is,the number of wirings can be reduced. Therefore, the number ofconnections between a substrate over which the circuit 100 is formed anda substrate for supplying signals to the substrate can be reduced, sothat improvement in reliability, improvement in yield, reduction inmanufacturing cost, or the like can be achieved. Some of the pluralityof transistors (e.g., the transistors 101 to 105) included in thecircuit 100 can be replaced with diodes.

FIG. 11B illustrates a structure where the transistors arediode-connected in the semiconductor device in FIG. 1A. The firstterminal of the transistor 101 can be connected to the node 11. Thefirst terminal of the transistor 102 can be connected to the wiring 114,and the gate of the transistor 102 can be connected to the wiring 111.The first terminal of the transistor 103 can be connected to the wiring113, and the gate of the transistor 103 can be connected to the wiring111. The first terminal of the transistor 105 can be connected to thewiring 113, and the gate of the transistor 105 can be connected to thenode 11. In this manner, the number of signals or power sources can bereduced. That is, the number of wirings can be reduced. Therefore, thenumber of connections between the substrate over which the circuit 100is formed and the substrate for supplying signals to the substrate canbe reduced, so that improvement in reliability, improvement in yield,reduction in manufacturing cost, or the like can be achieved. Some ofthe plurality of transistors (e.g., the transistors 101 to 105) includedin the circuit 100 can be diode-connected.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, FIGS. 8A to 8F, FIGS. 9A and 9B, and FIGS. 11A and 11B, thetransistors can be replaced with capacitors. For example, the capacitorscan be additionally provided without elimination of the transistors.

FIG. 11C illustrates a structure where the transistor 104 is replacedwith a capacitor 104A connected between the wiring 112 and the node 11in the semiconductor device in FIG. 1A. The capacitor 104A can controlthe potential of the node 11 in accordance with the potential of thewiring 112 by capacitive coupling. In this manner, by replacement of thetransistor 104 with the capacitor 104A, the amount of stationary currentcan be reduced, so that power consumption can be reduced.

FIG. 11D illustrates a structure where the capacitor 104A isadditionally provided in the semiconductor device in FIG. 1A. Changes inthe potential of the node 11 can be steep, so that power consumption canbe reduced.

FIG. 11E illustrates a structure where the transistor 102, thetransistor 103, and the transistor 105 are replaced with a capacitor102A connected between the wiring 114 and the wiring 111, a capacitor103B connected between the wiring 113 and the wiring 111, and acapacitor 105B connected between the wiring 113 and the node 11,respectively, in the semiconductor device in FIG. 1A.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, FIGS. 8A to 8F, FIGS. 9A and 9B, and FIGS. 11A to 11F, thetransistors can be replaced with resistors.

FIG. 11F illustrates a structure where the transistor 104 is replacedwith a resistor 104R in the semiconductor device in FIG. 1A. Theresistor 104R is connected between the wiring 112 and the node 11.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, FIGS. 8A to 8F, FIGS. 9A and 9B, and FIGS. 11A to 11F, a transistor108 can be additionally provided.

FIG. 46A illustrates a structure where the transistor 108 isadditionally provided in the semiconductor device in FIG. 1A. Thetransistor 108 is an n-channel transistor. However, this embodiment isnot limited to this, and the transistor 108 can be a p-channeltransistor. A first terminal of the transistor 108 is connected to thewiring 111. A second terminal of the transistor 108 is connected to thenode 11. A gate of the transistor 108 is connected to the wiring 112.

The operation of the semiconductor device in FIG. 46A is described. Infirst operation, second operation, and third operation, the signal IN3is set at an H level, so that the transistor 108 is turned on. Then, thewiring 111 and the node 11 are brought into conduction, so that thepotential of the wiring 111 is supplied to the node 11. Alternatively,the potential of the node 11 is supplied to the wiring 111. Note that infourth operation, although the signal IN3 is set at an H level, thepotential of the node 11 and the potential of the wiring 111 become an Hlevel; thus, the transistor 108 is turned off. However, the transistor108 is on until the potential of the wiring 111 becomes an H level.Thus, the potential of the node 11 is lowered. Then, V_(gs) of thetransistor 101 is lowered, so that dielectric breakdown, deterioration,or the like of the transistor 101 can be prevented. In contrast, infifth operation, sixth operation, seventh operation, and eighthoperation, the signal IN1 is set at an L level, so that the transistor108 is turned off. Thus, the node 11 and the wiring 111 are brought outof conduction.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, FIGS. 8A to 8F, FIGS. 9A and 9B, FIGS. 11A to 11F, and FIG. 46A, asignal which is different from the signal OUT can be generated. For thatpurpose, a transistor 109 can be additionally provided in thesesemiconductor devices.

FIG. 46B illustrates a structure where the transistor 109 isadditionally provided in the semiconductor device in FIG. 1A. Thepolarity of the transistor 109 is the same as that of the transistor101. Further, the transistor 109 can have the same function as thetransistor 101. A first terminal of the transistor 109 is connected tothe wiring 112. A second terminal of the transistor 109 is connected toa wiring 117. A gate of the transistor 109 is connected to the node 11.

Here, the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, FIGS. 8A to 8F, FIGS. 9A and 9B, FIGS. 11A to 11F, and FIGS. 46A and46B can be combined with each other as appropriate.

FIG. 12A illustrates a structure where the structure illustrated in FIG.6B is combined with the structure illustrated in FIG. 6E. The firstterminal of the transistor 103 is connected to the wiring 112. Thesecond terminal of the transistor 103 is connected to the wiring 111.The gate of the transistor 103 is connected to the wiring 111. The firstterminal of the transistor 105 is connected to the wiring 112. Thesecond terminal of the transistor 105 is connected to the node 11. Thegate of the transistor 105 is connected to the node 11. In this manner,the signal IN2 and the wiring 113 can be eliminated, so that the numberof signals and the number of wirings can be reduced. Therefore,reduction in the number of connections between the substrate over whichthe circuit 100 is formed and a different substrate, improvement inreliability, reduction in manufacturing cost, and/or reduction in powerconsumption can be achieved, for example.

FIG. 12B illustrates a structure where the structure illustrated in FIG.7A is combined with the structure illustrated in FIG. 8E. The transistor105 is eliminated. The first terminal of the transistor 104 is connectedto the wiring 112. The second terminal of the transistor 104 isconnected to the node 11. The gate of the transistor 104 is connected tothe wiring 116. In this manner, the number of transistors can bereduced, so that a layout area can be decreased. Further, the potentialof the node 11 can be fixed at an L level, so that a noise-resistantcircuit can be obtained.

FIG. 12C illustrates a structure where the structure illustrated in FIG.7D is combined with the structure illustrated in FIG. 11C. The firstterminal of the transistor 103 is connected to the wiring 114. The firstterminal of the transistor 105 is connected to the wiring 114. Thetransistor 104 is replaced with the capacitor 104A connected between thewiring 112 and the node 11.

As described above, this embodiment is not limited to the structureillustrated in FIG. 1A, and a variety of different structures can beused.

In the structures illustrated in FIG. 1A, FIGS. 6A to 6F, FIGS. 7A to7E, FIGS. 8A to 8F, FIGS. 9A and 9B, FIGS. 11A to 11F, FIGS. 12A to 12C,and FIGS. 46A and 46B, p-channel transistors can be used as thetransistors. Only some of the plurality of transistors included in thesemiconductor devices can be p-channel transistors. That is, a CMOScircuit can be employed in the semiconductor device of this embodiment.

FIG. 13A illustrates a structure where p-channel transistors are used asthe transistors in the semiconductor device in FIG. 1A. Transistors 101p to 105 p are p-channel transistors having functions which are similarto those of the transistors 101 to 105. In such a case, the voltage V₂is supplied to the wiring 115.

In the semiconductor device in FIG. 13A, as illustrated in FIG. 13B, thecircuit 100 can function as a logic circuit including a NAND.Specifically, the circuit 100 functions as a logic circuit where athree-input NAND is combined with two NOTs. The signal IN1 can be inputto a first input terminal of the NAND. A signal obtained by inversion ofthe signal IN2 with a first NOT can be input to a second input terminalof the NAND. A signal obtained by inversion of the signal IN3 with asecond NOT can be input to a third input terminal of the NAND. Thesignal OUT can be output from an output of the NAND. In other words, thecircuit 100 has a function of realizing a logical expression illustratedin FIG. 13C or a function of realizing a truth table obtained with thelogical expression. Therefore, the signal OUT is set at an L level whenthe signal IN1 is set at an L level and the signals IN2 and IN3 are setat an H level, and the signal OUT is set at an H level when other inputsignals are input. FIG. 13D illustrates a truth table when the signalsIN1 to IN3 are digital signals.

FIG. 12D illustrates a structure where p-channel transistors are used assome of the transistors in the semiconductor device in FIG. 1A. A gateof the transistor 104 p is connected to the node 11.

Embodiment 2

In this embodiment, a semiconductor device obtained by addition of anelement, a circuit, or the like to the semiconductor device inEmbodiment 1 is described.

First, a structure where a transistor 201 (a sixth transistor) isadditionally provided in the semiconductor device in Embodiment 1 isdescribed. FIG. 14A illustrates a structure where the transistor 201 isadditionally provided in the semiconductor device in FIG. 1A.

The transistor 201 is an n-channel transistor. However, this embodimentis not limited to this, and the transistor 201 can be a p-channeltransistor. A first terminal of the transistor 201 is connected to thewiring 115. A second terminal of the transistor 201 is connected to awiring 211 (a sixth wiring). A gate of the transistor 201 is connectedto the wiring 111.

Note that a gate of the transistor 201 is denoted by a node 12. Sincethe node 12 corresponds to the wiring 111 described in Embodiment 1,description “the wiring 111” can be replaced with description “the node12”. Therefore, description “the potential of the wiring 111 (apotential of the signal OUT)” can be replaced with description “apotential of the node 12”.

The function of the transistor 201 is described. The transistor 201 hasa function of controlling conduction between the wiring 115 and thewiring 211. Alternatively, the transistor 201 has a function ofcontrolling timing of supplying the potential of the wiring 115 to thewiring 211. Alternatively, the transistor 201 has a function ofcontrolling timing of supplying a signal or voltage which is to be inputto the wiring 115 to the wiring 211 when the signal or voltage is inputto the wiring 115. Alternatively, the transistor 201 has a function ofcontrolling timing of supplying an L-level signal or the voltage V₁ tothe wiring 211. Alternatively, the transistor 201 has a function ofcontrolling timing of lowering a potential of the wing 211. As describedabove, the transistor 201 can function as a switch. Note that thetransistor 201 does not need to have all the above functions. Thetransistor 201 can be controlled by an output signal of the circuit 100.

Next, the operation of the semiconductor device in FIG. 14A is describedwith reference to FIG. 15A. FIG. 15A illustrates a timing chart of asemiconductor device of this embodiment.

Note that a period A and a period B are provided in the timing chart inFIG. 15A. In addition, the period A and the period B alternately appearin the timing chart in FIG. 15A. A plurality of the periods A and aplurality of the periods B can alternately appear in the timing chart inFIG. 15A. Alternatively, in the timing chart in FIG. 15A, a period otherthan the period A and the period B can be provided or one of the periodA and the period B can be omitted.

Note that the lengths of the period A and the period B are approximatelythe same. Alternatively, for example, when a clock signal is input tothe semiconductor device of this embodiment, each of the lengths of theperiod A and the period B is approximately the same as the length of thehalf cycle of the clock signal. Alternatively, for example, when thesemiconductor device of this embodiment is used for a gate driver, eachof the lengths of the period A and the period B is approximately thesame as the length of one gate selection period.

First, the operation of the semiconductor device in the period A isdescribed with reference to a schematic view in FIG. 14B. In the periodA, the signal IN1 is set at an H level, the signal IN2 is set at an Llevel, and the signal IN3 is set at an L level. Thus, the circuit 100can perform the fourth operation in FIG. 3A, so that the potential ofthe node 12 (the signal OUT) is set at an H level. Accordingly, thetransistor 201 is turned on, so that the wiring 115 and the wiring 211are brought into conduction. Then, the potential of the wiring 115(e.g., the voltage V₁) is supplied to the wiring 211, so that thepotential of the wiring 211 (a signal GOUT) becomes an L level.

Next, the operation of the semiconductor device in the period B isdescribed with reference to a schematic view in FIG. 14C. In the periodB, the signal IN1 is set at an L level, the signal IN2 is set at an Hlevel, and the signal IN3 is set at an L level. Thus, the circuit 100can perform the sixth operation in FIG. 3C, so that the potential of thenode 12 (the signal OUT) is set at an L level. Accordingly, thetransistor 201 is turned off, so that the wiring 115 and the wiring 211are brought out of conduction. Thus, the wiring 211 is made to be in afloating state, so that the potential of the wiring 211 is kept atapproximately V₁.

As described above, the transistor 201 is turned on in the period A andis turned off in the period B. Thus, a period during which thetransistor 201 is on can be shortened. Accordingly, deterioration of thetransistor can be suppressed. Further, in the period A and the period B,the transistors 101, 102, 103, 104, 105, and 201 are not continuouslyon; thus, the length of time during which the transistors 101, 102, 103,104, 105, and 201 are on or the number of times the transistors 101,102, 103, 104, 105, and 201 are turned on can be reduced.

Next, the functions and features of the signals IN1 to IN3 aredescribed.

The level of the signal IN1 is changed between an H level and an L levelevery period. Thus, the signal IN1 can function as a clock signal. Thewiring 112 can function as a clock signal line (a clock line or a clocksupply line).

The level of the signal IN2 is changed between an H level and an L levelevery period. The signal IN2 is a signal obtained by inversion of thesignal IN1 or a signal which is 180° out of phase from the signal IN1.Thus, the signal IN2 can function as an inverted clock signal. Thewiring 113 can function as a clock signal line.

When each of the signal IN1 and the signal IN2 functions as a clocksignal, each of the signal IN1 and the signal IN2 can be either abalanced signal as illustrated in FIG. 15A or an unbalanced signal. Thebalanced signal is a signal whose period during which the signal is atan H level and whose period during which the signal is at an L level inone cycle have approximately the same length. The unbalanced signal is asignal whose period during which the signal is at an H level and whoseperiod during which the signal is at an L level in one cycle havedifferent lengths. Here, the term “different” include the range otherthan the range of the term “approximately the same”.

FIG. 15B illustrates a timing chart when each of the signal IN1 and thesignal IN2 is an unbalanced signal in the timing chart in FIG. 15A.

N-phase clock signals can be input to the semiconductor device of thisembodiment. Alternatively, some of the n-phase clock signals can beinput to the semiconductor device of this embodiment. The n-phase clocksignals are n pieces of clock signals whose cycles are different by 1/ncycle.

FIG. 15C illustrates a timing chart when one of three-phase clocksignals is used as the signal IN1 and another three-phase clock signalis used as the signal IN2.

As described above, the signals IN1 to IN3 can have a variety ofwaveforms in addition to the waveforms illustrated in the timing chartin FIG. 15A.

Next, the ratio of the channel width of the transistor 201 to thechannel width of the transistor 101 is described. For example, in thecase where the wiring 211 functions as a gate signal line, the wiring211 is provided so as to extend over a pixel portion and is connected toa pixel in some cases. That is, a large load is connected to the wiring211. Thus, the channel width of the transistor 201 is larger than thechannel width of each of the transistors included in the circuit 100. Insuch a case, the channel width of the transistor 201 is preferably tentimes or less the channel width of the transistor 101. More preferably,the channel width of the transistor 201 is five times or less thechannel width of the transistor 101. Further preferably, the channelwidth of the transistor 201 is three times or less the channel width ofthe transistor 101.

As described above, the ratio of the channel widths of the transistorsis preferably set to an appropriate ratio. Note that considering theratio of the channel widths of the transistors, the channel width of thetransistor 201 is preferably 1000 to 5000 μm. More preferably, thechannel width of the transistor 201 is 1500 to 4000 μm. Furtherpreferably, the channel width of the transistor 201 is 2000 to 3000 μm.

Next, a semiconductor device with a structure which is different fromthat in FIG. 14A is described.

In the structure illustrated in FIG. 14A, the structure of the circuit100 is not limited to the structure in FIG. 1A, and the variety ofstructures described in Embodiment 1 can be used. The structure of thecircuit 100 can be different from the structures described in Embodiment1 as long as a predetermined function can be realized.

FIG. 10A illustrates a structure where the structure in FIG. 7B is usedas the structure of the circuit 100 in FIG. 14A.

FIG. 10B illustrates a structure where the structure in FIG. 8D is usedas the structure of the circuit 100 in FIG. 14A. Generation of noise inthe node 12 through the transistor 103 can be prevented. Accordingly,malfunctions can be prevented.

FIG. 10C illustrates a structure where the structure in FIG. 8C is usedas the structure of the circuit 100 in FIG. 14A. The potential of thenode 11 can be further lowered, so that the transistor 201 can beprevented from being turned on.

In the structures illustrated in FIGS. 10A to 10C and FIG. 14A, atransistor 202 can be additionally provided.

FIG. 16A illustrates a structure where the transistor 202 isadditionally provided in the semiconductor device in FIG. 14A. Thetransistor 202 is an n-channel transistor. However, this embodiment isnot limited to this, and the transistor 202 can be a p-channeltransistor. A first terminal of the transistor 202 is connected to thewiring 115. A second terminal of the transistor 202 is connected to thewiring 211. A gate of the transistor 202 is connected to the wiring 113.The gate of the transistor 202 can be connected to a wiring which isdifferent from the wiring 113. Alternatively, the first terminal of thetransistor 202 can be connected to a wiring which is different from thewiring 115.

The function of the transistor 202 is described. The transistor 202 hasa function of controlling conduction between the wiring 115 and thewiring 211. Alternatively, the transistor 202 has a function ofcontrolling timing of supplying the potential of the wiring 115 to thewiring 211. Alternatively, the transistor 202 has a function ofcontrolling timing of supplying a signal or voltage which is to be inputto the wiring 115 to the wiring 211 when the signal or voltage is inputto the wiring 115. Alternatively, the transistor 202 has a function ofcontrolling timing of supplying an L-level signal or the voltage V₁ tothe wiring 211. Alternatively, the transistor 202 has a function ofcontrolling timing of lowering the potential of the wiring 211. Asdescribed above, the transistor 202 can function as a switch. Note thatthe transistor 202 does not need to have all the above functions. Thetransistor 202 can be controlled by the potential of the wiring 113(e.g., the signal IN2).

The operation of the semiconductor device in FIG. 16A is described.Since the signal IN2 is set at an L level in the period A, thetransistor 202 is turned off, as illustrated in FIG. 16B. Since thesignal IN2 is set at an H level in the period B, the transistor 202 isturned on, as illustrated in FIG. 16C. Thus, the wiring 115 and thewiring 211 are brought into conduction also in the period B, so that thepotential of the wiring 115 (e.g., the voltage V₁) is supplied to thewiring 211. Therefore, noise of the wiring 211 can be reduced. Forexample, when the semiconductor device in FIG. 16A is used for a displaydevice and the wiring 211 is connected to a gate of a pixel selectiontransistor, writing of a video signal, which is to be written to a pixelin a different row, to the pixel due to the noise of the wiring 211 canbe prevented. Alternatively, changes in a video signal held in the pixeldue to the noise of the wiring 211 can be prevented. Accordingly,display quality can be improved.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, and FIG.16A, a transistor 203 (a seventh transistor) can be additionallyprovided.

FIG. 17A illustrates a structure where the transistor 203 isadditionally provided in the semiconductor device in FIG. 14A. Thetransistor 203 is an n-channel transistor. However, this embodiment isnot limited to this, and the transistor 203 can be a p-channeltransistor. A first terminal of the transistor 203 is connected to thewiring 112. A second terminal of the transistor 203 is connected to thewiring 211. Further, a gate of the transistor 203 is denoted by a node13. Note that the gate of the transistor 102 can be connected to thenode 13. Therefore, a potential of the node 13 (V₁₃) can be used as thesignal IN3.

The function of the transistor 203 is described. The transistor 203 hasa function of controlling conduction between the wiring 112 and thewiring 211. Alternatively, the transistor 203 has a function ofcontrolling timing of supplying the potential of the wiring 112 to thewiring 211. Alternatively, the transistor 203 has a function ofcontrolling timing of supplying a signal or voltage which is to be inputto the wiring 112 to the wiring 211 when the signal or voltage is inputto the wiring 112. Alternatively, the transistor 203 has a function ofcontrolling timing of supplying an H-level signal or the voltage V₂ tothe wiring 211. Alternatively, the transistor 203 has a function ofcontrolling timing of supplying an L-level signal or the voltage V₁ tothe wiring 211. Alternatively, the transistor 203 has a function ofcontrolling timing of raising the potential of the wiring 211.Alternatively, the transistor 203 has a function of controlling timingof lowering the potential of the wiring 211. Alternatively, thetransistor 203 has a function of performing bootstrap operation.Alternatively, the transistor 203 has a function of raising thepotential of the node 13 by bootstrap operation. As described above, thetransistor 203 functions as a switch or a buffer. Note that thetransistor 203 does not need to have all the above functions. Thetransistor 203 can be controlled by the potential of the node 13, thepotential of the wiring 112 (the signal IN1), and/or the potential ofthe wiring 211 (the signal GOUT).

Next, the operation of the semiconductor device in FIG. 17A is describedwith reference to FIG. 17B. FIG. 17B illustrates a timing chart of thesemiconductor device of this embodiment.

Note that periods A to E are provided in the timing chart in FIG. 17B.The periods C, D, and E sequentially appear in the timing chart in FIG.17B. Other than the periods C, D, and E, the period A and the period Balternately appear. The periods A to E may be provided in differentorders.

First, the operation of the semiconductor device in the period A isdescribed with reference to a schematic view in FIG. 18A. In the periodA, the signal IN1 is set at an H level, the signal IN2 is set at an Llevel, and the potential of the node 13 (the signal IN3) is set at an Llevel. Thus, the circuit 100 can perform the fourth operation in FIG.3A, so that the potential of the node 12 (the signal OUT) is set at an Hlevel. Then, the transistor 201 is turned on, so that the wiring 115 andthe wiring 211 are brought into conduction. Thus, the potential of thewiring 115 (e.g., the voltage V₁) is supplied to the wiring 211. In thiscase, the potential of the node 13 becomes an L level, so that thetransistor 203 is turned off. Then, the wiring 112 and the wiring 211are brought out of conduction. Accordingly, the potential of the wiring115 (e.g., the voltage V₁) is supplied to the wiring 211, so that thesignal GOUT is set at an L level.

Next, the operation of the semiconductor device in the period B isdescribed with reference to a schematic view in FIG. 18B. In the periodB, the signal IN1 is set at an L level, the signal IN2 is set at an Hlevel, and the potential of the node 13 (the signal IN3) is kept at an Llevel. Thus, the circuit 100 can perform the sixth operation in FIG. 3C,so that the potential of the node 12 (the signal OUT) is set at an Llevel. Then, the transistor 201 is turned off, so that the wiring 115and the wiring 211 are brought out of conduction. In this case, thepotential of the node 13 becomes an L level, so that the transistor 203is turned off. Then, the wiring 112 and the wiring 211 are brought outof conduction. Accordingly, the wiring 211 is made to be in a floatingstate, so that the potential of the wiring 211 is kept at approximatelyV₁.

Next, the operation of the semiconductor device in the period C isdescribed with reference to a schematic view in FIG. 19A. In the periodC, the signal IN1 is set at an L level, the signal IN2 is set at an Hlevel, and the potential of the node 13 (the signal IN3) is set at an Hlevel. Thus, the circuit 100 can perform the fifth operation in FIG. 3B,so that the potential of the node 12 (the signal OUT) is set at an Llevel. Then, the transistor 201 is turned off, so that the wiring 115and the wiring 211 are brought out of conduction. In this case, thepotential of the node 13 becomes an H level, so that the transistor 203is turned on. Then, the wiring 112 and the wiring 211 are brought intoconduction, so that the potential of the wiring 112 (the signal IN1 atan L level) is supplied to the wiring 211. Accordingly, the potential ofthe wiring 112 (the signal IN1 at an L level) is supplied to the wiring211, so that the signal GOUT is set at an L level.

The operation of the semiconductor device in the period D is describedwith reference to a schematic view in FIG. 19B. In the period D, thesignal IN1 is set at an H level, the signal IN2 is set at an L level,and the potential of the node 13 (the signal IN3) is set at an H level.Thus, the circuit 100 can perform the third operation in FIG. 2C, sothat the potential of the node 12 (the signal OUT) is set at an L level.Then, the transistor 201 is turned off, so that the wiring 115 and thewiring 211 are brought out of conduction. In this case, the potential ofthe node 13 becomes an H level, so that the transistor 203 is turnedoff. Then, the wiring 112 and the wiring 211 are brought intoconduction, so that the potential of the wiring 112 (the signal IN1 atan H level) is supplied to the wiring 211. Accordingly, the potential ofthe wiring 112 (the signal IN1 at an H level) is supplied to the wiring211, so that the potential of the wiring 211 starts to rise. In thiscase, the node 13 is in a floating state. Then, the potential of thenode 13 is raised by capacitive coupling between the gate of thetransistor 203 and the second terminal of the transistor 203.Accordingly, the potential of the node 13 becomes V₂+V_(th) 203+V_(a).This is so-called bootstrap operation. Thus, the potential of the wiring211 becomes V₂, so that the signal GOUT is set at an H level.

The operation of the semiconductor device in the period E is describedwith reference to a schematic view in FIG. 19C. In the period E, thesignal IN1 is set at an L level, the signal IN2 is set at an H level,and the potential of the node 13 (the signal IN3) is set at an L level.Thus, the circuit 100 can perform the sixth operation in FIG. 3C, sothat the potential of the node 12 (the signal OUT) is set at an L level.Then, the transistor 201 is turned off, so that the wiring 115 and thewiring 211 are brought out of conduction. In this case, the potential ofthe node 13 becomes an L level. Then, the transistor 203 is turned off,so that the wiring 112 and the wiring 211 are brought out of conduction.Note that timing of when the signal IN1 is set at an L level from an Hlevel can be faster than timing of when the potential of the node 13 ischanged from an H level to an L level. In this case, when the transistor203 is on, that is, the wiring 112 and the wiring 211 are conducting,the signal IN1 is set at an L level. Thus, the signal IN1 at an L levelis supplied to the wiring 211, so that the signal GOUT is set at an Llevel.

Note that in the structures illustrated in FIGS. 10A to 10C, FIG. 14A,FIG. 16A, and FIG. 17A, the gate of the transistor 203 can be connectedto the node 12. The gate of the transistor 201 can be connected to thenode 13 (FIG. 47A).

Note that in the structures illustrated in FIGS. 10A to 10C, FIG. 14A,FIG. 16A, FIG. 17A, and FIG. 47A, the circuit 100 and other transistorscan be connected to different wirings. For example, as illustrated inFIG. 47B, the first terminal of the transistor 203 can be connected to awiring which is different from the wiring 112 (e.g., the wiring 112A).The first terminal of the transistor 201 can be connected to a wiringwhich is different from the wiring 115 (e.g., the wiring 115A).

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, and FIGS. 47A and 47B, a transistor 204 can be additionallyprovided.

FIG. 20A illustrates a structure where the transistor 204 isadditionally provided in the semiconductor device in FIG. 17A. Thetransistor 204 is an n-channel transistor. However, this embodiment isnot limited to this, and the transistor 204 can be a p-channeltransistor. A first terminal of the transistor 204 is connected to thewiring 115. A second terminal of the transistor 204 is connected to thenode 13. A gate of the transistor 204 is connected to the node 12.

The function of the transistor 204 is described. The transistor 204 hasa function of controlling conduction between the wiring 115 and the node13. Alternatively, the transistor 204 has a function of controllingtiming of supplying the potential of the wiring 115 to the node 13.Alternatively, the transistor 204 has a function of controlling timingof supplying a signal or voltage which is to be input to the wiring 115to the node 13 when the signal or voltage is input to the wiring 115.Alternatively, the transistor 204 has a function of controlling timingof supplying an L-level signal or the voltage V₁ to the node 13.Alternatively, the transistor 204 has a function of controlling timingof lowering the potential of the node 13. As described above, thetransistor 204 can function as a switch. Note that the transistor 204does not need to have all the above functions. The transistor 204 can becontrolled by the potential of the node 12 (e.g., the signal OUT).

The operation of the semiconductor device in FIG. 20A is described. In aperiod A, an H-level signal is output from the circuit 100 asillustrated in FIG. 20B, so that the transistor 204 is turned on. Then,the wiring 115 and the node 13 are brought into conduction, so that thepotential of the wiring 115 (e.g., the voltage V₁) is supplied to thenode 13. In periods B to E, an L-level signal is output from the circuit100, so that the transistor 204 is turned off. Thus, the wiring 115 andthe node 13 are brought out of conduction. Note that FIG. 20Cillustrates a schematic view of the semiconductor device in FIG. 20A inthe period B.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, and FIGS. 47A and 47B, a transistor 205 can beadditionally provided.

FIG. 21A illustrates a structure where the transistor 205 isadditionally provided in the semiconductor device in FIG. 17A. Thetransistor 205 is an n-channel transistor. However, this embodiment isnot limited to this, and the transistor 205 can be a p-channeltransistor. A first terminal of the transistor 205 is connected to awiring 212. A second terminal of the transistor 205 is connected to thenode 13. A gate of the transistor 205 is connected to the wiring 212.

A signal which is input to the wiring 212 and the function of the wiring212 are described. A signal IN4 is input to the wiring 212. The signalIN4 can function as a start pulse. Thus, the wiring 212 can function asa signal line. Constant voltage can be supplied to the wiring 212. Thus,the wiring 212 can function as a power supply line.

Note that when a plurality of semiconductor devices are connected, thewiring 212 is connected to the wiring 211 provided in a differentsemiconductor device (e.g., a semiconductor device in the precedingstage). Thus, the wiring 212 can function as a gate signal line, a scanline, a selection line, a capacitor line, or a power supply line.Further, the signal IN4 can function as a gate signal or a scan signal.

The function of the transistor 205 is described. The transistor 205 hasa function of controlling conduction between the wiring 212 and the node13. Alternatively, the transistor 205 has a function of controllingtiming of supplying a potential of the wiring 212 to the node 13.Alternatively, the transistor 205 has a function of controlling timingof supplying a signal or voltage which is to be input to the wiring 212to the node 13 when the signal or voltage is input to the wiring 212.Alternatively, the transistor 205 has a function of controlling timingof supplying an H-level signal or the voltage V₂ to the node 13.Alternatively, the transistor 205 has a function of stopping the supplyof a signal or voltage to the node 13. Alternatively, the transistor 205has a function of controlling timing of raising the potential of thenode 13. Alternatively, the transistor 205 has a function of making thenode 13 be in a floating state. As described above, the transistor 205can function as a switch, a diode, a diode-connected transistor, or thelike. Note that the transistor 205 does not need to have all the abovefunctions. The transistor 205 can be controlled by the potential of thewiring 212 (the signal IN4) and/or the potential of the node 13.

Next, the operation of the semiconductor device in FIG. 21A is describedwith reference to FIG. 21B. FIG. 21B illustrates a timing chart whichcan be applied to the semiconductor device of this embodiment. In aperiod C, the signal IN4 is set at an H level, as illustrated in FIG.22A. Thus, the transistor 205 is turned on, so that the wiring 212 andthe node 13 are brought into conduction. Then, the potential of thewiring 212 (e.g., the signal IN4 at an H level) is supplied to the node13. Accordingly, the potential of the node 13 starts to rise. Afterthat, when the potential of the node 13 becomes V₂−V_(th) 205 (which isobtained by subtraction of the threshold voltage of the transistor 205(V_(th) 205) from a potential of the gate of the transistor 205 (e.g.,V₂), the transistor 205 is turned off. Thus, the node 13 is made to bein a floating state, so that the potential of the node 13 is kept atV₂−V_(th) 205. In periods A to B and D to E, the signal IN4 is set at anL level. Therefore, the transistor 205 is turned off, so that the wiring212 and the node 13 are brought out of conduction. Note that FIG. 22Billustrates a schematic view of the operation of the semiconductordevice in FIG. 21A in the period B.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, and FIGS. 47A and 47B, a transistor 206can be additionally provided.

FIG. 23A illustrates a structure where the transistor 206 isadditionally provided in the semiconductor device in FIG. 21A. Thetransistor 206 is an n-channel transistor. However, this embodiment isnot limited to this, and the transistor 206 can be a p-channeltransistor. A first terminal of the transistor 206 is connected to thewiring 212. A second terminal of the transistor 206 is connected to thenode 13. A gate of the transistor 206 is connected to the wiring 113.

The function of the transistor 206 is described. The transistor 206 hasa function of controlling conduction between the wiring 212 and the node13. Alternatively, the transistor 206 has a function of controllingtiming of supplying the potential of the wiring 212 to the node 13.Alternatively, the transistor 206 has a function of controlling timingof supplying a signal or voltage which is to be input to the wiring 212to the node 13 when the signal or voltage is input to the wiring 212.Alternatively, the transistor 206 has a function of controlling timingof supplying an L-level signal or the voltage V₁ to the node 13.Alternatively, the transistor 206 has a function of controlling timingof supplying an H-level signal or the voltage V₂ to the node 13.Alternatively, the transistor 206 has a function of controlling timingof lowering the potential of the node 13. Alternatively, the transistor206 has a function of controlling timing of raising the potential of thenode 13. As described above, the transistor 206 can function as aswitch. Note that the transistor 206 does not need to have all the abovefunctions. The transistor 206 can be controlled by the potential of thewiring 113 (e.g., the signal IN2).

The operation of the semiconductor device in FIG. 23A is described. In aperiod C, the signal IN2 is set at an H level as illustrated in FIG.23B, so that the transistor 206 is turned on. Thus, the wiring 212 andthe node 13 are brought into conduction, so that the potential of thewiring 212 (e.g., the signal IN4 at an H level) is supplied to the node13. In this manner, changes in the potential of the node 13 can be steepin the period C, so that the drive frequency of the semiconductor devicecan be increased.

As in the period C, the signal IN2 is set at an H level in periods B andE, so that the transistor 206 is turned on. Thus, the wiring 212 and thenode 13 are brought into conduction, so that the potential of the wiring212 (e.g., the signal IN4 at an L level) is supplied to the node 13. Inthis manner, the potential of the node 13 can be fixed at a certainpotential in the period B, so that a noise-resistant semiconductordevice can be obtained. Alternatively, the potential of the node 13 canbe lowered in the period E, so that the transistor 203 is turned off.Note that FIG. 24A illustrates a schematic view of the semiconductordevice in FIG. 23A in the period B.

In a period A, the signal IN2 is set at an L level as illustrated inFIG. 24B, so that the transistor 206 is turned off. Thus, the wiring 212and the node 13 are brought out of conduction. In this manner, thetransistor 206 is off, so that deterioration of the transistor 206 canbe suppressed.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, FIG. 23A, and FIGS. 47A and 47B, atransistor 207 can be additionally provided.

FIG. 25A illustrates a structure where the transistor 207 isadditionally provided in the semiconductor device in FIG. 17A. Thetransistor 207 is an n-channel transistor. However, this embodiment isnot limited to this, and the transistor 207 can be a p-channeltransistor. A first terminal of the transistor 207 is connected to thewiring 115. A second terminal of the transistor 207 is connected to thenode 13. A gate of the transistor 207 is connected to a wiring 213.

A signal which is input to the wiring 213 and the function of the wiring213 are described. A signal IN5 is input to the wiring 213. The signalIN5 can function as a reset signal. Thus, the wiring 213 can function asa signal line. Constant voltage can be supplied to the wiring 213. Thus,the wiring 213 can function as a power supply line.

Note that when a plurality of semiconductor devices are connected, thewiring 213 is connected to the wiring 211 provided in a differentsemiconductor device (e.g., a semiconductor device in the next stage).Thus, the wiring 213 can function as a gate signal line, a scan line, aselection line, a capacitor line, or a power supply line. Further, thesignal IN5 can function as a gate signal or a scan signal.

The function of the transistor 207 is described. The transistor 207 hasa function of controlling conduction between the wiring 115 and the node13. Alternatively, the transistor 207 has a function of controllingtiming of supplying the potential of the wiring 115 to the node 13.Alternatively, the transistor 207 has a function of controlling timingof supplying a signal or voltage which is to be input to the wiring 115to the node 13 when the signal or voltage is input to the wiring 115.Alternatively, the transistor 207 has a function of controlling timingof supplying an L-level signal or the voltage V₁ to the node 13.Alternatively, the transistor 207 has a function of controlling timingof lowering the potential of the node 13. As described above, thetransistor 207 can function as a switch. Note that the transistor 207does not need to have all the above functions. The transistor 207 can becontrolled by a potential of the wiring 213 (e.g., the signal IN5).

The operation of the semiconductor device in FIG. 25A is described withreference to FIG. 25B. FIG. 25B illustrates a timing chart which can beapplied to the semiconductor device of this embodiment. In a period E,the signal IN5 is set at an H level, as illustrated in FIG. 26A. Thus,the transistor 207 is turned on, so that the wiring 115 and the node 13are brought into conduction. Then, the potential of the wiring 115(e.g., the voltage V₁) is supplied to the node 13. Accordingly, thepotential of the node 13 is lowered. In periods A to D, the signal IN5is set at an L level. Therefore, the transistor 207 is turned off, sothat the wiring 115 and the node 13 are brought out of conduction. Notethat FIG. 26B illustrates a schematic view of the operation of thesemiconductor device in FIG. 25A in the period B.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, FIG. 23A, FIG. 25A, and FIGS. 47A and 47B,the gate of the transistor 102 can be connected to a wiring which isdifferent from the node 13 (e.g., the wiring 211).

FIG. 27B illustrates a structure where the gate of the transistor 102 isconnected to the wiring 211 in a semiconductor device in FIG. 27A. Byapplication of high voltage to the gate of the transistor 102,dielectric breakdown or deterioration of the transistor 102 can beprevented.

Note that the semiconductor device in FIG. 27A corresponds to asemiconductor device in which the transistors 201 to 207 areadditionally provided in the semiconductor device in FIG. 14A.

In the structures in FIGS. 10A to 10C, FIG. 14A, FIG. 16A, FIG. 17A,FIG. 20A, FIG. 21A, FIG. 23A, FIG. 25A, FIGS. 27A and 27B, and FIGS. 47Aand 47B, the first terminal of the transistor 204 can be connected to awiring which is different from the wiring 115 (e.g., the wiring 113, thewiring 212, the wiring 213, the node 12, or the node 13). The gate ofthe transistor 204 can be connected to a wiring which is different fromthe node 12 (e.g., the wiring 112).

FIG. 27C illustrates a structure where the first terminal of thetransistor 204 is connected to the wiring 211 and the gate of thetransistor 204 is connected to the wiring 112 in the semiconductordevice in FIG. 27A. Thus, in a period D, the potential of the node 13can be lowered. Therefore, dielectric breakdown or deterioration of thetransistor connected to the node 13 (e.g., the transistor 102, thetransistor 203, the transistor 205, or the transistor 206) can beprevented.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, FIG. 23A, FIG. 25A, FIGS. 27A to 27C, andFIGS. 47A and 47B, the first terminal of the transistor 205 can beconnected to a wiring which is different from the wiring 212 (e.g., thewiring 113 or the wiring 116). The gate of the transistor 205 can beconnected to a wiring which is different from the wiring 212 (e.g., thewiring 113 or the wiring 116).

FIG. 28A illustrates a structure where the first terminal of thetransistor 205 is connected to the wiring 116 in the semiconductordevice in FIG. 27A.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, FIG. 23A, FIG. 25A, FIGS. 27A to 27C, FIG.28A, and FIGS. 47A and 47B, the second terminal of the transistor 207can be connected to a wiring which is different from the node 13 (e.g.,the wiring 211, the node 11, or the node 12). Alternatively, the firstterminal of the transistor 207 can be connected to a wiring which isdifferent from the wiring 115 (e.g., the wiring 112, the wiring 116, thenode 11, or the node 12).

FIG. 28B illustrates a structure where the second terminal of thetransistor 207 is connected to the wiring 211 in the semiconductordevice in FIG. 27A. In a period E, the potential of the wiring 115(e.g., the voltage V₁) can be supplied to the wiring 211 through thetransistor 207. Accordingly, the fall time of the signal GOUT can beshortened.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, FIG. 23A, FIG. 25A, FIGS. 27A to 27C,FIGS. 28A and 28B, and FIGS. 47A and 47B, the first terminal of thetransistor 201 can be connected to a wiring which is different from thewiring 115 (e.g., the wiring 113, the wiring 212, the wiring 213, thenode 12, or the node 13). The first terminal of the transistor 202 canbe connected to a wiring which is different from the wiring 115 (e.g.,the wiring 112 or the node 12). The first terminal of the transistor 204can be connected to a wiring which is different from the wiring 115(e.g., the wiring 113, the wiring 212, the wiring 213, the node 12, orthe node 13). The first terminal of the transistor 207 can be connectedto a wiring which is different from the wiring 115 (e.g., the wiring112, the wiring 116, the wiring 212, or the node 12). The terminals ofthe transistors can be connected to a variety of different wirings,without limitation to the connection relationships illustrated indrawings.

FIG. 28C illustrates a structure where the first terminal of thetransistor 201, the first terminal of the transistor 202, and the firstterminal of the transistor 204 are connected to the wiring 113 and thefirst terminal of the transistor 207 is connected to the wiring 112 inthe semiconductor device in FIG. 27A. H-level signals can be input tothe first terminals of the transistors 201, 202, 204, and 207, so thatdeterioration of these transistors can be suppressed.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, FIG. 23A, FIG. 25A, FIGS. 27A to 27C,FIGS. 28A to 28C, and FIGS. 47A and 47B, the transistors can be replacedwith diodes. For example, the transistors can be diode-connected.

FIG. 29A illustrates a structure where the transistors are replaced withdiodes in the semiconductor device in FIG. 27A. The transistor 201 canbe replaced with a diode 201 d. One of electrodes (e.g., an inputterminal) of the diode 201 d is connected to the wiring 211, and theother of the electrodes (e.g., an output terminal) of the diode 201 d isconnected to the node 12. The transistor 202 can be replaced with adiode 202 d. One of electrodes (e.g., an input terminal) of the diode202 d is connected to the wiring 211, and the other of the electrodes(e.g., an output terminal) of the diode 202 d is connected to the wiring113. The transistor 203 can be replaced with a diode 203 d. One ofelectrodes (e.g., an input terminal) of the diode 203 d is connected tothe node 13, and the other of the electrodes (e.g., an output terminal)of the diode 203 d is connected to the wiring 211. The transistor 204can be replaced with a diode 204 d. One of electrodes (e.g., an inputterminal) of the diode 204 d is connected to the node 13, and the otherof the electrodes (e.g., an output terminal) of the diode 204 d isconnected to the node 12. The transistor 205 can be replaced with adiode 205 d. One of electrodes (e.g., an input terminal) of the diode205 d is connected to the wiring 212, and the other of the electrodes(e.g., an output terminal) of the diode 205 d is connected to the node13. The transistor 207 can be replaced with a diode 207 d. One ofelectrodes (e.g., an input terminal) of the diode 207 d is connected tothe node 13, and the other of the electrodes (e.g., an output terminal)of the diode 207 d is connected to the wiring 213. In this manner, thenumber of signals or power sources can be reduced. That is, the numberof wirings can be reduced. Therefore, the number of connections betweena substrate over which the semiconductor device of this embodiment isformed and a substrate for supplying signals to the substrate can bereduced, so that improvement in reliability, improvement in yield,reduction in manufacturing cost, or the like can be achieved. Some ofthe plurality of transistors in this embodiment can be replaced withdiodes.

FIG. 29B illustrates a structure where the transistors arediode-connected in the semiconductor device in FIG. 27A. For example,the first terminal of the transistor 201 is connected to the node 12,and the gate of the transistor 201 is connected to the wiring 211. Forexample, the first terminal of the transistor 202 is connected to thewiring 113, and the gate of the transistor 202 is connected to thewiring 211. For example, the first terminal of the transistor 203 isconnected to the node 13, and the gate of the transistor 203 isconnected to the node 13. For example, the first terminal of thetransistor 204 is connected to the node 12, and the gate of thetransistor 204 is connected to the node 13. For example, the firstterminal of the transistor 207 is connected to the wiring 213, and thegate of the transistor 207 is connected to the node 13. In this manner,the number of signals or power sources can be reduced. That is, thenumber of wirings can be reduced. Therefore, the number of connectionsbetween the substrate over which the semiconductor device of thisembodiment is formed and the substrate for supplying signals to thesubstrate can be reduced, so that improvement in reliability,improvement in yield, reduction in manufacturing cost, or the like canbe achieved. Some of the plurality of transistors of this embodiment canbe diode-connected.

FIG. 29C illustrates a structure where p-channel transistors arediode-connected in the semiconductor device in FIG. 27A. A transistor201 p, a transistor 202 p, a transistor 203 p, a transistor 204 p, atransistor 205 p, and a transistor 207 p are p-channel transistorshaving functions which are similar to the functions of the transistor201, the transistor 202, the transistor 203, the transistor 204, thetransistor 205, and the transistor 207, respectively. The semiconductordevice in FIG. 29C has the same connection relation as the semiconductordevice in FIG. 29B. Note that since the transistors are diode-connected,the semiconductor device in FIG. 29C differs from the semiconductordevice in FIG. 29B in that a gate of the transistor 201 p is connectedto the node 12, a gate of the transistor 202 p is connected to thewiring 113, a gate of the transistor 203 p is connected to the wiring211, a gate of the transistor 204 p is connected to the node 12, a gateof the transistor 205 p is connected to the node 13, and a gate of thetransistor 207 p is connected to the wiring 213. In this manner, thenumber of signals or power sources can be reduced. That is, the numberof wirings can be reduced. Therefore, the number of connections betweenthe substrate over which the semiconductor device of this embodiment isformed and the substrate for supplying signals to the substrate can bereduced, so that improvement in reliability, improvement in yield,reduction in manufacturing cost, or the like can be achieved. Some ofthe plurality of transistors in this embodiment can be diode-connected.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, FIG. 23A, FIG. 25A, FIGS. 27A to 27C,FIGS. 28A to 28C, FIGS. 29A to 29C, and FIGS. 47A and 47B, terminals orelectrodes of the transistors do not need to be connected to the samewiring. For example, the first terminal of the transistor 101, the firstterminal of the transistor 104, and the first terminal of the transistor203 can be connected to different wirings. For example, the gate of thetransistor 103, the gate of the transistor 105, and the gate of thetransistor 202 can be connected to different wirings. For example, thefirst terminal of the transistor 102, the first terminal of thetransistor 105, the first terminal of the transistor 201, the firstterminal of the transistor 202, the first terminal of the transistor204, and the first terminal of the transistor 207 can be connected todifferent wirings. For example, the first terminal of the transistor 205and the first terminal of the transistor 206 can be connected todifferent wirings. In order to realize this structure, one wiring can bedivided into a plurality of wirings.

FIG. 30A illustrates a structure where the wiring 112 is divided into aplurality of wirings 112A to 112C, the wiring 113 is divided into aplurality of wirings 113A to 113D, the wiring 115 is divided into aplurality of wirings 115A to 115G, and the wiring 212 is divided into aplurality of wirings 212A and 212B in the semiconductor device in FIG.27A. The first terminal of the transistor 201 is connected to the wiring115D. The first terminal of the transistor 202 is connected to thewiring 115E, and the gate of the transistor 202 is connected to thewiring 113C. The first terminal of the transistor 203 is connected tothe wiring 112C. The first terminal of the transistor 204 is connectedto the wiring 115F. The first terminal and the gate of the transistor205 are connected to the wiring 212A. The first terminal of thetransistor 206 is connected to the wiring 212B. The gate of thetransistor 206 is connected to the wiring 113D. The first terminal ofthe transistor 207 is connected to the wiring 115G.

Note that the wirings 112A to 112C can have functions which are similarto that of the wiring 112. The wirings 113A to 113D can have functionswhich are similar to that of the wiring 113. The wirings 115A to 115Gcan have functions which are similar to that of the wiring 115. Thewirings 212A and 212B can have functions which are similar to that ofthe wiring 212. Therefore, the signal IN1 can be input to the wirings112A to 112C. The signal IN2 can be input to the wirings 113A to 113D.The voltage V₁ can be supplied to the wirings 115A to 115G. The signalIN4 can be input to the wirings 212A and 212B. Different voltages orsignals can be supplied to the wirings 112A to 112C. Different voltagesor signals can be supplied to the wirings 113A to 113D. Differentvoltages or signals can be supplied to the wirings 115A to 115G.Different voltages or signals can be supplied to the wirings 212A and212B.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, FIG. 23A, FIG. 25A, FIGS. 27A to 27C,FIGS. 28A to 28C, FIGS. 29A to 29C, FIG. 30A, and FIGS. 47A and 47B,some of the transistors can be eliminated. For example, one of thetransistor 201 and the transistor 204 can be eliminated. Alternatively,for example, when the semiconductor device includes the transistor 206,one or both of the transistor 205 and the transistor 207 can beeliminated. Some of the other transistors can be eliminated asnecessary.

FIG. 30B illustrates a structure where the transistors 201 and 205 areeliminated from the semiconductor device in FIG. 27A. The number oftransistors is reduced, so that a layout area can be decreased. Further,power consumption can be reduced.

In the structures FIGS. 10A to 10C, FIG. 14A, FIG. 16A, FIG. 17A, FIG.20A, FIG. 21A, FIG. 23A, FIG. 25A, FIGS. 27A to 27C, FIGS. 28A to 28C,FIGS. 29A to 29C, FIGS. 30A and 30B, and FIGS. 47A and 47B, a capacitor220 which is connected between the node 13 and the wiring 211 can beadditionally provided.

FIG. 30C illustrates a structure where the capacitor 220 which isconnected between the node 13 and the wiring 211 is additionallyprovided in the semiconductor device in FIG. 17A. With this structure,the potential of the node 13 is likely to rise in bootstrap operation.Thus, V_(gs) of the transistor 203 can be increased. Accordingly, thechannel width of the transistor 203 can be made small. Alternatively,the fall time or rise time of the signal GOUT can be shortened. A MOScapacitor can be used as the capacitor, for example.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, FIG. 23A, FIG. 25A, FIGS. 27A to 27C,FIGS. 28A to 28C, FIGS. 29A to 29C, FIGS. 30A to 30C, and FIGS. 47A and47B, a signal which is different from the signal GOUT can be generated.For example, in the semiconductor device of this embodiment, when asignal SOUT is generated in addition to the signal GOUT and a pluralityof semiconductor devices are connected, the signal SOUT is not output tothe wiring 211 but can be input to a semiconductor device in a differentstage as a start pulse. Thus, the degree of delay or distortion of thesignal SOUT is lower than that of the signal GOUT. Therefore, thesemiconductor device can be driven with a signal which does not easilycause delay or distortion, delay of an output signal of thesemiconductor device can be reduced. In order to realize this, in thestructures illustrated in FIG. 14A, FIG. 16A, FIG. 17A, FIG. 20A, FIG.21A, FIG. 23A, FIG. 25A, FIGS. 27A to 27C, FIGS. 28A to 28C, FIGS. 29Ato 29C, FIGS. 30A to 30C, and FIGS. 47A and 47B, a transistor 208 can beadditionally provided.

FIG. 31A illustrates a structure where the transistor 208 isadditionally provided in the semiconductor device in FIG. 17A. Thetransistor 208 can have the same function and polarity as the transistor203. A first terminal of the transistor 208 is connected to the wiring112. A second terminal of the transistor 208 is connected to a wiring214. A gate of the transistor 208 is connected to the node 13. Thewiring 214 can have a function which is similar to that of the wiring211. For example, when a plurality of semiconductor devices areconnected, the wiring 211 is connected to the wiring 212 provided in adifferent semiconductor device (e.g., a semiconductor device in the nextstage). For example, as illustrated in FIG. 31B, a transistor 209 can beadditionally provided. The transistor 209 can have the same function andpolarity as the transistor 203. A first terminal of the transistor 209is connected to the wiring 115. A second terminal of the transistor 209is connected to the wiring 214. A gate of the transistor 209 isconnected to the node 12. Note that FIG. 31C illustrates a timing chartwhen the signal SOUT is generated in addition to the signal GOUT.

As described above, this embodiment is not limited to the structureillustrated in FIG. 14A, and a variety of different structures can beused.

In the structures illustrated in FIGS. 10A to 10C, FIG. 14A, FIG. 16A,FIG. 17A, FIG. 20A, FIG. 21A, FIG. 23A, FIG. 25A, FIGS. 27A to 27C,FIGS. 28A to 28C, FIGS. 29A to 29C, FIGS. 30A to 30C, FIGS. 31A and 31B,and FIGS. 47A and 47B, p-channel transistors can be used as thetransistors. Only some of the plurality of transistors included in thesemiconductor devices can be p-channel transistors. That is, a CMOScircuit can be employed in the semiconductor device of this embodiment.

FIG. 32A illustrates a structure where p-channel transistors are used asthe transistors in the semiconductor device in FIG. 27A. Transistors 201p to 207 p are p-channel transistors having functions which are similarto those of the transistors 201 to 207. In such a case, the voltage V₂is supplied to the wiring 115. Note that as illustrated in the timingchart in FIG. 32B, the signal IN1, the signal IN2, the signal IN4, thesignal IN5, the potential of the node 11, the potential of the node 12,the potential of the node 13, and the signal GOUT can be inverted.

Next, the ratio of the channel widths of the transistors 201 to 209 andthe size of the transistors are described.

First, the transistor 201 supplies a potential to the wiring 211.Further, the load of the wiring 211 is larger than that of the node 12.Thus, the channel width of the transistor 201 is larger than the channelwidth of each of the transistors included in the circuit 100. In such acase, the channel width of the transistor 201 is preferably ten times orless the channel width of the transistor 101. More preferably, thechannel width of the transistor 201 is five times or less the channelwidth of the transistor 101. Further preferably, the channel width ofthe transistor 201 is three times or less the channel width of thetransistor 101.

The potential of the gate of the transistor 202 is changed more steeplythan the potential of the gate of the transistor 201. Thus, the channelwidth of the transistor 202 is preferably smaller than the channel widthof the transistor 201. In such a case, the channel width of thetransistor 201 is preferably ten times or less the channel width of thetransistor 202. More preferably, the channel width of the transistor 201is seven times or less the channel width of the transistor 202. Furtherpreferably, the channel width of the transistor 201 is five times orless the channel width of the transistor 202.

The transistor 203 changes the potential of the wiring 211 by supply ofa potential to the wiring 211. Further, a large load (e.g., a gatesignal line, a pixel, a transistor, or a capacitor) is connected to thewiring 211. Thus, the channel width of the transistor 203 is the largestin the transistors included in the semiconductor device of thisembodiment. For example, the channel width of the transistor 203 ispreferably ten times or less the channel width of the transistor 201.Much preferably, the channel width of the transistor 203 is five timesor less the channel width of the transistor 201. Much preferably, thechannel width of the transistor 203 is three times or less the channelwidth of the transistor 201.

The transistor 204 supplies a potential to the node 13. Further, theload of the node 13 is larger than that of the node 12. Thus, thechannel width of the transistor 204 is smaller than the channel width ofthe transistor 201. In such a case, the channel width of the transistor201 is preferably five times or less the channel width of the transistor204. More preferably, the channel width of the transistor 201 is threetimes or less the channel width of the transistor 204. Furtherpreferably, the channel width of the transistor 201 is twice or less thechannel width of the transistor 204.

Since changes in the potential of the node 13 can be steep in a period Aby making the channel width of the transistor 205 larger, the drivefrequency of the semiconductor device can be increased. Thus, thechannel width of the transistor 205 is larger than the channel width ofthe transistor 201 or the channel width of each of the transistorsincluded in the circuit 100. Alternatively, the channel width of thetransistor 205 is smaller than the channel width of the transistor 203.In such a case, the channel width of the transistor 203 is preferablyten times or less the channel width of the transistor 205. Morepreferably, the channel width of the transistor 203 is five times orless the channel width of the transistor 205. Further preferably, thechannel width of the transistor 203 is twice or less the channel widthof the transistor 205.

The transistor 206 keeps the potential of the node 13 by supply of apotential to the node 13. Thus, the channel width of the transistor 206is smaller than the channel width of the transistor 205. In such a case,the channel width of the transistor 205 is preferably three times orless the channel width of the transistor 206. More preferably, thechannel width of the transistor 205 is twice or less the channel widthof the transistor 206. Further preferably, the channel width of thetransistor 205 is 1.8 times or less the channel width of the transistor206.

The transistor 207 decreases the potential of the node 13 by supply of apotential to the node 13. Note that the transistor 203 can be turned onin a period E by making the decrease in the potential of the node 13slower. In this manner, the transistor 203 can supply a potential to thewiring 211 in the period E, so that the potential of the wiring 211 canbe quickly decreased. Thus, the channel width of the transistor 207 ispreferably smaller than the channel width of the transistor 205. In sucha case, the channel width of the transistor 205 is preferably ten timesor less the channel width of the transistor 207. More preferably, thechannel width of the transistor 205 is seven times or less the channelwidth of the transistor 207. Further preferably, the channel width ofthe transistor 205 is five times or less the channel width of thetransistor 207.

The transistor 208 supplies a potential to the wiring 214. Further, theload of the wiring 214 is smaller than that of the wiring 211. Thus, thechannel width of the transistor 208 is smaller than the channel width ofthe transistor 203. In such a case, the channel width of the transistor203 is preferably ten times or less the channel width of the transistor208. More preferably, the channel width of the transistor 203 is seventimes or less the channel width of the transistor 208. Furtherpreferably, the channel width of the transistor 203 is four times orless the channel width of the transistor 208.

The transistor 209 supplies a potential to the wiring 214. Further, theload of the wiring 214 is smaller than that of the wiring 211. Thus, thechannel width of the transistor 209 is smaller than the channel width ofthe transistor 203. In such a case, the channel width of the transistor203 is preferably seven times or less the channel width of thetransistor 209. More preferably, the channel width of the transistor 203is four times or less the channel width of the transistor 209. Furtherpreferably, the channel width of the transistor 203 is 2.5 times or lessthe channel width of the transistor 209.

Note that considering the ratio of the channel widths of thetransistors, the channel width of the transistor 201 is preferably 1000to 5000 μm. More preferably, the channel width of the transistor 201 is1500 to 4000 μm. Further preferably, the channel width of the transistor201 is 2000 to 3000 μm. The channel width of the transistor 202 ispreferably 200 to 3000 μm. More preferably, the channel width of thetransistor 202 is 300 to 2000 μm. Further preferably, the channel widthof the transistor 202 is 400 to 1000 μm. The channel width of thetransistor 203 is preferably 2000 to 30000 μm. More preferably, thechannel width of the transistor 203 is 3000 to 15000 μm. Furtherpreferably, the channel width of the transistor 203 is 4000 to 10000 μm.The channel width of the transistor 204 is preferably 200 to 2500 μm.More preferably, the channel width of the transistor 204 is 400 to 2000μm. Further preferably, the channel width of the transistor 204 is 700to 1500 μm. The channel width of the transistor 205 is preferably 500 to3000 μm. More preferably, the channel width of the transistor 205 is1000 to 2500 μm. Further preferably, the channel width of the transistor205 is 1500 to 2000 μm. The channel width of the transistor 206 ispreferably 300 to 2000 μm. More preferably, the channel width of thetransistor 206 is 500 to 1500 μm. Further preferably, the channel widthof the transistor 206 is 800 to 1300 μm. The channel width of thetransistor 207 is preferably 100 to 1500 μm. More preferably, thechannel width of the transistor 207 is 300 to 1000 μm. Furtherpreferably, the channel width of the transistor 207 is 400 to 800 μm.The channel width of the transistor 208 is preferably 300 to 5000 μm.More preferably, the channel width of the transistor 208 is 500 to 2000μm. Further preferably, the channel width of the transistor 208 is 800to 1500 μm. The channel width of the transistor 209 is preferably 200 to2000 μm. More preferably, the channel width of the transistor 209 is 400to 1500 μm. Further preferably, the channel width of the transistor 209is 500 to 1000 μm.

Embodiment 3

In this embodiment, a display device, a pixel included in the displaydevice and a shift register circuit included in the display device aredescribed. Note that the shift register circuit can include thesemiconductor device in Embodiment 1 or 2.

First, a display device is described with reference to FIGS. 33A to 33D.The display device includes a circuit 1001, a circuit 1002, a circuit1003_1, a pixel portion 1004, and a terminal 1005. A plurality ofwirings can be arranged so as to extend over the pixel portion 1004 fromthe circuit 1003_1. The wirings can function as gate signal lines orscan lines. Alternatively, a plurality of wirings can be arranged so asto extend over the pixel portion 1004 from the circuit 1002. The wiringshave functions as video signal lines or data lines. Pixels are providedso as to correspond to the wirings extending from the circuit 1003_1 andto the wirings extending from the circuit 1002. For example, a varietyof different wirings can be provided in the pixel portion 1004. Thewirings can functions as gate signal lines, data lines, power supplylines, capacitor lines, or the like.

Note that the circuit 1001 has a function of supplying a signal,voltage, current, or the like to the circuits 1002 and 1003.Alternatively, the circuit 1001 has a function of controlling thecircuits 1002 and 1003. As described above, the circuit 1001 canfunction as a controller, a control circuit, a timing generator, a powersupply circuit, a regulator, or the like.

Note that the circuit 1002 has a function of supplying a video signal tothe pixel portion 1004. Alternatively, the circuit 1002 has a functionof controlling the luminance, transmittance, or the like of a pixelincluded in the pixel portion 1004. As described above, the circuit 1002functions as a driver circuit, a source driver, a signal line drivercircuit, or the like.

Note that the circuits 1003_1 and 1003_2 have a function of supplying ascan signal or a gate signal to the pixel portion 1004. Alternatively,the circuits 1003_1 and 1003_2 have a function of selecting a pixelincluded in the pixel portion 1004. As described above, the circuits1003_1 and 1003_2 each functions as a driver circuit, a gate driver, ora scan line driver circuit. Note that the circuits 1003_1 and 1003_2 candrive either the same wiring or different wirings. For example, thecircuit 1003_1 can drive a gate signal line in an odd-numbered stage,and the circuit 1003_2 can drive a gate signal line in an even-numberedstage.

Note that the circuits 1001, 1002, 1003_1, and 1003_2 can be formed overthe same substrate as the pixel portion 1004 or can be formed over asubstrate which is different from the substrate over which the pixelportion 1004 is formed (e.g., a semiconductor substrate or an SOIsubstrate).

FIG. 33A illustrates a structure where the circuit 1003_1 is formed overthe same substrate 1006 as the pixel portion 1004 and the circuits 1001and 1002 are formed over a substrate which is different from thesubstrate over which the pixel portion 1004 is formed. The drivefrequency of the circuit 1003_1 is lower than that of the circuit 1001or 1002. Thus, a non-single-crystal semiconductor, an amorphoussemiconductor, a microcrystalline semiconductor, an oxide semiconductor,an organic semiconductor, or the like can be easily used for asemiconductor layer of a transistor. Accordingly, the display device canbe made larger and manufactured at low cost.

FIG. 33B illustrates a structure where the circuits 1003_1 and 1003_2are formed over the same substrate 1006 as the pixel portion 1004, whilethe circuits 1001 and 1002 are formed over a substrate which isdifferent from the substrate over which the pixel portion 1004 isformed. The drive frequency of each of the circuits 1003_1 and 1003_2 islower than that of the circuit 1001 or 1002. Thus, a non-single-crystalsemiconductor, an amorphous semiconductor, a microcrystallinesemiconductor, an oxide semiconductor, an organic semiconductor, or thelike can be easily used for a semiconductor layer of a transistor.Accordingly, the display device can be made larger and manufactured atlow cost.

FIG. 33C illustrates a structure where the circuits 1002, 1003_1, and1003_2 are formed over the same substrate 1006 as the pixel portion1004, while the circuit 1001 is formed over a substrate which isdifferent from the substrate over which the pixel portion 1004 isformed.

FIG. 33C illustrates a structure where a circuit 1002 a, which is partof the circuit 1002, and the circuits 1003_1 and 1003_2 are formed overthe same substrate 1006 as the pixel portion 1004, while the circuit1001 and a circuit 1002 b, which is another part of the circuit 1002,are formed over a substrate which is different from the substrate overwhich the pixel portion 1004 is formed. In this case, as the circuit1002 a, a circuit with low drive frequency, such as a switch, a shiftregister, and/or a selector can be used.

Next, a pixel included in the pixel portion 1004 is described withreference to FIG. 33E. A pixel 3020 includes a transistor 3021, a liquidcrystal element 3022, and a capacitor 3023. A first terminal of thetransistor 3021 is connected to a wiring 3031. A second terminal of thetransistor 3021 is connected to one of the two electrodes of the liquidcrystal element 3022 and one of the two electrodes of the capacitor3023. A gate of the transistor 3021 is connected to a wiring 3032. Theother of the electrodes of the liquid crystal element 3022 is connectedto an electrode 3034. The other of the electrodes of the capacitor 3023is connected to a wiring 3033.

A video signal is input from the circuit 1002 in FIGS. 33A to 33D to thewiring 3031. Thus, the wiring 3031 can function as a signal line, avideo signal line, or a source signal line. A scan signal, a selectionsignal, or a gate signal is input from the circuits 1003_1 and 1003_2 inFIGS. 33A to 33D to the wiring 3032. Thus, the wiring 3032 can functionas a signal line, a scan line, or a gate signal line. Constant voltagecan be supplied from the circuit 1001 in FIGS. 33A to 33D to the wiring3033 and the electrode 3034. Thus, the wiring 3033 can function as apower supply line or a capacitor line. Alternatively, the electrode 3034can function as a common electrode or a counter electrode. For example,precharge voltage can be supplied to the wiring 3031. The level of theprecharge voltage is approximately equal to the level of the voltagesupplied to the electrode 3034. As another example, a signal can beinput to the wiring 3033. In this manner, voltage applied to the liquidcrystal element 3022 can be controlled, so that the amplitude of a videosignal can be decreased or inversion driving can be performed. Asanother example, a signal can be input to the electrode 3034. In thismanner, frame inversion driving can be performed.

The transistor 3021 has a function of controlling conduction between thewiring 3031 and one of the electrodes of the liquid crystal element3022. Alternatively, the transistor 3021 has a function of controllingtiming of writing a video signal to a pixel. In this manner, thetransistor 3021 functions as a switch. The capacitor 3023 has a functionof holding a difference between a potential of one of the electrodes ofthe liquid crystal element 3022 and a potential of the wiring 3033.Alternatively, the capacitor 3023 has a function of holding voltageapplied to the liquid crystal element so that the level of the voltageis constant. In this manner, the capacitor 3023 functions as a storagecapacitor.

Next, a shift register circuit is described with reference to FIG. 34.The shift register circuit can be included in the circuit 1002, thecircuit 1003_1, and/or the circuit 1003_2.

A shift register circuit 1100 includes a plurality of flip-flop circuits1101_1 to 1101_N (N is a natural number). Note that the semiconductordevice described in Embodiment 1 or 2 can be used for each of theflip-flop circuits 1101_1 to 1101_N.

The shift register circuit 1100 is connected to wirings 1111_1 to1111_N, a wiring 1112, a wiring 1113, a wiring 1114, a wiring 1115, anda wiring 1116. In a flip-flop circuit 1101_i (i is a natural number ofany one of 1 to N), the wiring 211 is connected to the wiring 1111_1;the wiring 112 is connected to the wiring 1112; the wiring 113 isconnected to the wiring 1113; the wiring 212 is connected to a wiring1111_i−1; the wiring 213 is connected to a wiring 1111_i+1; and thewiring 115 is connected to the wiring 1115. Note that in a flip-flopcircuit in an odd-numbered stage and a flip-flop circuit in aneven-numbered stage, portions to which the wiring 112 and the wiring 113are connected are inversed. Note that in the flip-flop circuit 1101_1,the wiring 212 is connected to the wiring 1114. In the flip-flop circuit1101_N, the wiring 213 is connected to the wiring 116.

Next, an example of a signal or voltage which is input to or output fromeach wiring and the function of each wiring are described. SignalsGOUT_1 to GOUT_N are output from the wirings 1111_1 to 1111_N. Thesignals GOUT_1 to GOUT_N are signals often output from the flip-flopcircuits 1101_1 to 1101_N and can have functions which are similar tothat of the signal GOUT. Thus, the wirings 1111_1 and 1111_N can havefunctions which are similar to those of the wiring 211. A signal GCK1 isinput to the wiring 1112, and a signal GCK2 is input to the wiring 1113.The signal GCK1 can have a function which is similar to that of thesignal IN2 or IN3, and the signal GCK2 can have a function which issimilar to that of the signal IN2 or IN3. Thus, the wiring 1112 can havea function which is similar to that of the wiring 112 or 113, and thewiring 1113 can have a function which is similar to that of the wiring112 or 113. A signal GSP is input to the wiring 1114. The signal GSP canhave a function which is similar to that of the signal IN4. Thus, thewiring 1114 can have a function which is similar to that of the wiring212. The voltage V₁ is supplied to the wiring 1115. Thus, the wiring1115 can have a function which is similar to that of the wiring 115. Asignal GRE is input to the wiring 1116. The signal GRE can have afunction which is similar to that of the signal IN5. Thus, the wiring1116 can have a function which is similar to that of the wiring 213.

Next, the operation of the shift register circuit in one flame period inFIG. 34 is described with reference to a timing chart in FIG. 35.

For example, a signal GOUT_i−1 is set at an H level. Then, the flip-flopcircuit 1101_i starts operation in a period C. After the signal GCK1 andthe signal GCK2 are inverted, the flip-flop circuit 1101_i startsoperation in a period D. Thus, the signal GOUT_i is set at an H level.Since the signal GOUT_i is input to a flip-flop circuit 1101_i+1, theflip-flop circuit 1101_i+1 starts operation in the period C. After thesignal GCK1 and the signal GCK2 are inverted, the flip-flop circuit1101_i+1 starts operation in the period D. Then, a signal GOUT_i+1 isset at an H level. Since the signal GOUT_i+1 is input to the flip-flopcircuit 1101_i, the flip-flop circuit 1101_i starts operation in aperiod E. Thus, the signal GOUT_i is set at an L level. Then, every timethe signal GCK1 and the signal GCK2 are inverted, the flip-flop circuit1101_i repeats operation in a period A and operation in a period B.Thus, the signal GOUT_i is kept at an L level. Note that in FIG. 35, oneof the signal GCK1 and the signal GCK2 is shown as GCK.

Note that the semiconductor device described in Embodiment 1 or 2 can beused for the shift register in this embodiment. Therefore, the H levelof the signals GOUT_1 to GOUT_N can be increased to V₂, so that thelength of a time during which the transistor included in the pixel is oncan be longer. Accordingly, a time for writing a video signal to thepixel can be adequately secured, so that display quality can beimproved. Alternatively, since the fall time and the rise time of thesignals GOUT_1 to GOUT_N can be shortened, a video signal for a pixel ina selected row can be prevented from being written to a pixel in adifferent row. Therefore, display quality can be improved.Alternatively, since variation in the fall time of the signals GOUT_1 toGOUT_N can be suppressed, variation in the influence of feedthrough forthe video signal held in the pixel can be suppressed. Thus, displayunevenness due to crosstalk or the like can be suppressed.Alternatively, since the size of the transistor can be made small, aload on the shift register (e.g., parasitic capacitance) can be reduced.Therefore, the current supply capability of an external circuit having afunction of supplying a signal, voltage, or the like to the shiftregister can be decreased, the size of the external circuit or the sizeof a display device including the external circuit can be made small.

Embodiment 4

In this embodiment, a signal line driver circuit is described. Note thatthe signal line driver circuit can be referred to as a semiconductordevice or a signal generation circuit.

First, the structure of a signal line driver circuit is described withreference to FIG. 36A. The signal line driver circuit includes a circuit2001 and a circuit 2002. The circuit 2002 includes a plurality ofcircuits 2002_1 to 2002_N (N is a natural number). The circuits 2002_1to 2002_N each include a plurality of transistors 2003_1 to 2003_k (k isa natural number). The transistors 2003_1 to 2003_k are n-channeltransistors. However, this embodiment is not limited to this. Thetransistors 2003_1 to 2003_k can be either p-channel transistors or CMOSswitches.

The connection relation of the signal line driver circuit is describedtaking the circuit 2002_1 as an example. First terminals of thetransistors 2003_1 to 2003_k are connected to wirings 2004_1 to 2004_k,respectively. Second terminals of the transistors 2003_1 to 2003_k areconnected to wirings S1 to Sk, respectively. Gates of the transistors2003_1 to 2003_k are connected to the wiring 2004_1.

The circuit 2001 has a function of controlling timing of sequentiallyoutputting H-level signals to wirings 2005_1 to 2005_N or a function ofsequentially selecting the circuits 2002_1 to 2002_N. In this manner,the circuit 2001 functions as a shift register. The circuit 2001 canoutput H-level signals to the wirings 2005_1 to 2005_N in differentorders. Alternatively, the circuit 2001 can select the circuits 2002_1to 2002_N in different orders. In this manner, the circuit 2001 canfunction as a decoder.

The circuit 2002_1 has a function of controlling timing of when thewirings 2004_1 to 2004_k and the wirings S1 to Sk are brought intoconduction. Alternatively, the circuit 2001_1 has a function ofcontrolling timing of supplying potentials of the wirings 2004_1 to2004_k to the wirings S1 to Sk. In this manner, the circuit 2002_1 canfunction as a selector. Note that each of the circuits 2002_2 to 2002_Ncan have a function which is similar to the function of the circuit2002_1.

Each of the transistors 2003_1 to 2003_N has a function of controllingtiming of when the wirings 2004_1 to 2004_k and the wirings S1 to Sk arebrought into conduction. Alternatively, each of the transistors 2003_1to 2003_N has a function of controlling timing of supplying thepotentials of the wirings 2004_1 to 2004_k to the wirings S1 to Sk. Forexample, the transistor 2003_1 has a function of controlling timing ofwhen the wiring 2004_1 and the wiring S1 are brought into conduction.Alternatively, the transistor 2003_1 has a function of controllingtiming of supplying the potential of the wiring 2004_1 to the wiring S1.In this manner, each of the transistors 2003_1 to 2003_N can function asa switch.

Note that signals are supplied to the wirings 2004_1 to 2004_k. Thesignals are analog signals corresponding to image data or image signals.In this manner, the signals can function as video signals. Therefore,the wirings 2004_1 to 2004_k can function as signal lines. For example,depending on the pixel structure, the signals can be digital signals,analog voltage, or analog current.

Next, the operation of the signal line driver circuit in FIG. 36A isdescribed with reference to a timing chart in FIG. 36B. FIG. 36Billustrates signals 2015_1 to 2015_N and signals 2014_1 to 2014_k. Thesignals 2015_1 to 2015_N are output signals in the circuit 2001. Thesignals 2014_1 to 2014_k are signals which are input to the wirings2004_1 to 2004_k. Note that one operation period of the signal linedriver circuit corresponds to one gate selection period in a displaydevice. One gate selection period is divided into a period T0 to TN. Theperiod T0 is a period for applying precharge voltage to pixels in aselected row concurrently and can serve as a precharge period. Each ofthe periods T1 to TN is a period during which video signals are writtento pixels in the selected row and can serve as a writing period.

First, in the period T0, the circuit 2001 supplies H-level signals tothe wirings 2005_1 to 2005_N. Then, for example, the transistors 2003_1to 2003_k are turned on in the circuit 2002_1, so that the wirings2004_1 to 2004_k and the wirings S1 to Sk are brought into conduction.In this case, precharge voltage Vp is applied to the wirings 2004_1 to2004_k. Thus, the precharge voltage Vp is output to the wirings S1 to Skthrough the transistors 2003_1 to 2003_k. Thus, the precharge voltage Vpis written to the pixels in the selected row, so that the pixels in theselected row are precharged.

In the periods T1 to TN, the circuit 2001 sequentially outputs H-levelsignals to the wirings 2005_1 to 2005_N. For example, in the period T1,the circuit 2001 outputs an H-level signal to the wiring 2005_1. Then,the transistors 2003_1 to 2003_k are turned on, so that the wirings2004_1 to 2004_k and the wirings S1 to Sk are brought into conduction.In this case, Data (S1) to Data (Sk) are input to the wirings 2004_1 to2004_k, respectively. The Data (S1) to Data (Sk) are input to pixels ina selected row in first to k-th columns through the transistors 2003_1to 2003_k, respectively. Therefore, in the periods T1 to TN, videosignals are sequentially written to the pixels in the selected row by kcolumns.

By writing video signals to pixels by a plurality of columns asdescribed above, the number of video signals or the number of wiringscan be reduced. Therefore, the number of connections to an externalcircuit can be reduced, so that improvement in yield, improvement inreliability, reduction in the number of components, and/or reduction incost can be achieved. Alternatively, by writing video signals to pixelsby a plurality of columns, writing time can be extended. Therefore,shortage of writing of video signals can be prevented, so that displayquality can be improved.

Note that by increasing k, the number of connections to the externalcircuit can be reduced. However, if k is too large, time to writesignals to pixels would be shortened. Therefore, it is preferable thatk≦6. It is much preferable that k≦3. It is much more preferable thatk=2.

In particular, in the case where the number of color elements of a pixelis n (n is a natural number), k=n or k=n×d (d is a natural number) ispreferable. For example, in the case where the pixel is divided intocolor elements of red (R), green (G), and blue (B), k=3 or k=3×d ispreferable. For example, in the case where the pixel is divided into m(m is a natural number) pieces of subpixels, k=m or k=m×d is preferable.For example, in the case where the pixel is divided into two subpixels,k=2 is preferable. Alternatively, in the case where the number of colorelements of the pixel is n, k=m×n or k=m×n×d is preferable.

For example, this embodiment is applied to a display device. In thiscase, the signal line driver circuit in this embodiment can be formedover the same substrate as a pixel portion or can be formed over asubstrate which is different from a substrate over which the pixelportion is formed (e.g., a silicon substrate or an SOI substrate).Alternatively, part of the signal line driver circuit in this embodiment(e.g., the circuit 2002) can be formed over the same substrate as thepixel portion and another part of the signal line driver circuit in thisembodiment (e.g., the circuit 2001) can be formed over a substrate whichis different from the substrate over which the pixel portion is formed.

FIG. 36C illustrates a structure where the circuit 2001 and the circuit2002 are formed over the same substrate as a pixel portion 2007.Therefore, the number of connections between the substrate over whichthe pixel portion is formed and an external circuit can be reduced, sothat improvement in yield, improvement in reliability, reduction in thenumber of components, or reduction in cost can be achieved, for example.In particular, when a scan line driver circuit 2006A and a scan linedriver circuit 2006B are formed over the same substrate as the pixelportion 2007, the number of connections to the external circuit can befurther reduced.

FIG. 36D illustrates a structure where the circuit 2002 is formed overthe same substrate as the pixel portion 2007 and the circuit 2001 isformed over a substrate which is different from the substrate over whichthe pixel portion 2007 is formed. Also in this case, the number ofconnections between the substrate over which the pixel portion is formedand the external circuit can be reduced, so that improvement in yield,improvement in reliability, reduction in the number of components, orreduction in cost can be achieved, for example. Alternatively, since thenumber of circuits which are formed over the same substrate as the pixelportion 2007 is made smaller, the size of a frame can be reduced.

Note that the shift register circuit in Embodiment 3 can be used for thecircuit 2001. In this case, all the transistors included in the circuit2001 can be n-channel transistors, so that the number of manufacturingsteps can be reduced. Alternatively, since deterioration of thetransistor can be suppressed, the life of the signal line driver circuitcan be extended.

Embodiment 5

In this embodiment, examples of protection circuits are described. Aprotection circuit is provided in order to prevent a semiconductordevice (e.g., a transistor, a capacitor, or a circuit) which isconnected to a wiring, or the like from being damaged by ESD(electrostatic discharge).

First, a protection circuit is described with reference to FIG. 37A. Aprotection circuit 3000 includes a transistor 3001 and a transistor3002. The transistor 3001 and the transistor 3002 are n-channeltransistors. However, this embodiment is not limited to this. Thetransistor 3001 and the transistor 3002 can be p-channel transistors.

The connection relation of the protection circuit 3000 is described. Afirst terminal of the transistor 3001 is connected to a wiring 3012. Asecond terminal of the transistor 3001 is connected to a wiring 3011. Agate of the transistor 3001 is connected to the wiring 3011. A firstterminal of the transistor 3002 is connected to a wiring 3013. A secondterminal of the transistor 3002 is connected to the wiring 3011. A gateof the transistor 3002 is connected to the wiring 3013.

Examples of signals or voltages supplied to the wirings 3011 to 3013 andthe functions of the wirings 3011 to 3013 are described. A signal (e.g.,a scan signal, a video signal, a clock signal, a start signal, a resetsignal, or a selection signal) or voltage (e.g., negative power supplyvoltage, ground voltage, or positive power supply voltage) is suppliedto the wiring 3011. Therefore, the wiring 3011 can function as a signalline, a power supply line, or the like. Positive power supply voltage(V_(DD)) is supplied to the wiring 3012. Therefore, the wiring 3012 canfunction as a power supply line. Negative power supply voltage (V_(SS)),ground voltage, or the like is supplied to the wiring 3013. Therefore,the wiring 3013 can function as a power supply line.

The operation of the protection circuit 3000 is described. When apotential of the wiring 3011 is substantially between V_(SS) and V_(DD),the transistor 3001 and the transistor 3002 are turned off. Thus,voltage, a signal, or the like supplied to the wiring 3011 is suppliedto the semiconductor device which is connected to the wiring 3011. Notethat due to the adverse effect of static electricity, a potential whichis higher or lower than power supply voltage is supplied to the wiring3011. Then, the semiconductor device which is connected to the wiring3011 might be broken by the potential which is higher or lower than thepower supply voltage. In order to prevent such a semiconductor devicefrom being damaged by electrostatic discharge, change in the wiring 3011is suppressed by turning on the transistor 3001 or the transistor 3002.For example, the transistor 3001 is turned on in the case where thepotential which is higher than the power supply voltage is supplied tothe wiring 3011. Then, since electric charge accumulated in the wiring3011 is transferred to the wiring 3012 through the transistor 3001, thepotential of the wiring 3011 is lowered. Accordingly, the semiconductordevice can be prevented from being damaged by electrostatic discharge.In contrast, for example, in the case where the potential which is lowerthan the power supply voltage is supplied to the wiring 3011, thetransistor 3002 is turned on. Then, since the electric chargeaccumulated in the wiring 3011 is transferred to the wiring 3013 throughthe transistor 3002, the potential of the wiring 3011 is raised.Accordingly, the semiconductor device which is connected to the wiring3011 can be prevented from being damaged by electrostatic discharge.

Note that in the structure illustrated in FIG. 37A, one of thetransistor 3001 and the transistor 3002 can be eliminated. FIG. 37Billustrates a structure where the transistor 3002 is eliminated from theprotection circuit illustrated in FIG. 37A. FIG. 37C illustrates astructure where the transistor 3002 is eliminated from the protectioncircuit illustrated in FIG. 37A.

Note that in the structures illustrated in FIGS. 37A to 37C, a pluralityof transistors can be connected in series between the wiring 3011 andthe wiring 3012. Alternatively, a plurality of transistors can beconnected in series between the wiring 3011 and the wiring 3013. FIG.37D illustrates a structure where the transistor 3001 and a transistor3003 are connected in series between the wiring 3011 and the wiring 3012in the protection circuit in FIG. 37A. Further, FIG. 37D illustrates astructure where the transistor 3002 and a transistor 3004 are connectedin series between the wiring 3011 and the wiring 3013. A first terminalof the transistor 3003 is connected to the wiring 3012. A secondterminal of the transistor 3003 is connected to the first terminal ofthe transistor 3001. A gate of the transistor 3003 is connected to thefirst terminal of the transistor 3001. A first terminal of thetransistor 3004 is connected to the wiring 3013. A second terminal ofthe transistor 3004 is connected to the first terminal of the transistor3002. A gate of the transistor 3004 is connected to the first terminalof the transistor 3004. For example, as illustrated in FIG. 37E, thegate of the transistor 3001 and the gate of the transistor 3003 can beconnected to each other. Alternatively, the gate of the transistor 3002and the gate of the transistor 3004 can be connected to each other.Alternatively, a plurality of transistors can be connected in seriesbetween the wiring 3011 and the wiring 3012 or the wiring 3011 and thewiring 3013.

Note that in the structures illustrated in FIGS. 37A to 37E, a pluralityof transistors can be connected in parallel between the wiring 3011 andthe wiring 3012. Alternatively, a plurality of transistors can beconnected in parallel between the wiring 3011 and the wiring 3013. FIG.37F illustrates a structure where the transistor 3001 and the transistor3003 are connected in parallel between the wiring 3011 and the wiring3012 in the protection circuit in FIG. 37A. Further, FIG. 37Fillustrates a structure where the transistor 3002 and the transistor3004 are connected in parallel between the wiring 3011 and the wiring3013. The first terminal of the transistor 3003 is connected to thewiring 3012. The second terminal of the transistor 3003 is connected tothe wiring 3011. The gate of the transistor 3003 is connected to thewiring 3011. The first terminal of the transistor 3004 is connected tothe wiring 3013. The second terminal of the transistor 3004 is connectedto the wiring 3011. The gate of the transistor 3004 is connected to thewiring 3013.

Note that in the structures illustrated in FIGS. 37A to 37F, a capacitorand a resistor can be connected in parallel between the gate of thetransistor and the first terminal of the transistor. Only one of acapacitor and a resistor can be connected between the gate of thetransistor and the first terminal of the transistor. FIG. 37Gillustrates a structure where a capacitor 3005 and a resistor 3006 areconnected in parallel between the gate of the transistor 3001 and thefirst terminal of the transistor 3001 in the protection circuit in FIG.37A. Further, FIG. 37G illustrates a structure where a capacitor 3007and a resistor 3008 are connected in parallel between the gate of thetransistor 3002 and the first terminal of the transistor 3002. Thus,breakage or deterioration of the protection circuit 3000 itself can beprevented. For example, in the case where a potential which is higherthan power supply voltage is supplied to the wiring 3011, V_(gs) of thetransistor 3001 is raised. Thus, the transistor 3001 is turned on, sothat the potential of the wiring 3011 is lowered. However, since highvoltage is applied between the gate of the transistor 3001 and thesecond terminal of the transistor 3001, the transistor might be damagedor deteriorate. In order to prevent damage or deterioration of thetransistor, a potential of the gate of the transistor 3001 is raised andV_(gs) of the transistor 3001 is lowered. The capacitor 3005 is used forrealizing this operation. When the transistor 3001 is turned on, apotential of the first terminal of the transistor 3001 is raisedinstantaneously. Then, with capacitive coupling of the capacitor 3005,the potential of the gate of the transistor 3001 is raised. In thismanner, V_(gs) of the transistor 3001 can be lowered, and breakage ordeterioration of the transistor 3001 can be suppressed. Similarly, inthe case where a potential which is lower than the power supply voltageis supplied to the wiring 3011, a potential of the first terminal of thetransistor 3002 is lowered instantaneously. Then, with capacitivecoupling of the capacitor 3007, the potential of the gate of thetransistor 3002 is lowered. In this manner, V_(gs) of the transistor3002 can be lowered, so that breakage or deterioration of the transistor3002 can be suppressed.

Note that parasitic capacitance between the gate of the transistor andthe first terminal of the transistor can be used as the capacitor.Therefore, an area where a material used for the gate of the transistorand a material used for the first terminal of the transistor overlapwith each other is preferably larger than an area where the materialused for the gate of the transistor and the second terminal of thetransistor overlap with each other.

Note that for the resistor, a material whose conductivity is lower thanthat of a material used for the wiring 3011 or the material used for thegate of the transistor (e.g., the same material as a pixel electrode, alight-transmitting electrode, or a semiconductor layer to which animpurity is added) can be used.

Here, the protection circuits illustrated in FIGS. 37A to 37G can beused for a variety of circuits or wirings (e.g., a signal line drivercircuit, a scan line driver circuit, a level shift circuit, a gatesignal line, a source signal line, a power supply line, and a capacitorline). FIG. 38A illustrates a structure when a protection circuit isprovided in a gate signal line. In this case, the wiring 3012 and thewiring 3013 can be connected to any of wirings connected to a gatedriver 3100. Thus, the number of power sources and the number of wiringscan be reduced. FIG. 38B illustrates a structure when a protectioncircuit is provided in a terminal to which a signal or voltage issupplied from the outside such as an FPC. In this case, the wiring 3012and the wiring 3013 can be connected to any of external terminals. Forexample, the wiring 3012 is connected to a terminal 3101 a, and thewiring 3013 is connected to a terminal 3101 b. In this case, in aprotection circuit provided in the terminal 3101 a, the transistor 3001can be eliminated. Similarly, in a protection circuit provided in theterminal 3101 b, the transistor 3002 can be eliminated. Thus, the numberof transistors can be reduced, so that a layout area can be reduced.

Embodiment 6

In this embodiment, transistors are described with reference to FIGS.39A to 39C.

FIG. 39A illustrates a top-gate transistor and a display element formedover the transistor. FIG. 39B illustrates a bottom-gate transistor and adisplay element formed over the transistor.

The transistor in FIG. 39A includes a substrate 5260; an insulatinglayer 5261 formed over the substrate 5260; a semiconductor layer 5262which is formed over the insulating layer 5261 and is provided with aregion 5262 a, a region 5262 b, a region 5262 c, a region 5262 d, and aregion 5262 e; an insulating layer 5263 formed so as to cover thesemiconductor layer 5262; a conductive layer 5264 formed over thesemiconductor layer 5262 and the insulating layer 5263; an insulatinglayer 5265 which is formed over the insulating layer 5263 and theconductive layer 5264 and is provided with openings; and a conductivelayer 5266 which is formed over the insulating layer 5265 and in theopenings formed in the insulating layer 5265.

The transistor in FIG. 39B includes a substrate 5300; a conductive layer5301 formed over the substrate 5300; an insulating layer 5302 formed soas to cover the conductive layer 5301; a semiconductor layer 5303 aformed over the conductive layer 5301 and the insulating layer 5302; asemiconductor layer 5303 b formed over the semiconductor layer 5303 a; aconductive layer 5304 formed over the semiconductor layer 5303 b and theinsulating layer 5302; an insulating layer 5305 which is formed over theinsulating layer 5302 and the conductive layer 5304 and is provided withan opening; and a conductive layer 5306 which is formed over theinsulating layer 5305 and in the opening formed in the insulating layer5305.

The transistor in FIG. 39C includes a semiconductor substrate 5352including a region 5353 and a region 5355; an insulating layer 5356formed over the semiconductor substrate 5352; an insulating layer 5354formed over the semiconductor substrate 5352; a conductive layer 5357formed over the insulating layer 5356; an insulating layer 5358 which isformed over the insulating layer 5354, the insulating layer 5356, andthe conductive layer 5357 and is provided with openings; and aconductive layer 5359 which is formed over the insulating layer 5358 andin the openings formed in the insulating layer 5358. Thus, a transistoris formed in each of a region 5350 and a region 5351.

Note that in each of the transistors illustrated in FIGS. 39A to 39C, asillustrated in FIG. 39A, over the transistor, it is possible to form aninsulating layer 5267 which is formed over the conductive layer 5266 andthe insulating layer 5265 and is provided with an opening; a conductivelayer 5268 which is formed over the insulating layer 5267 and in theopening formed in the insulating layer 5267; an insulating layer 5269which is formed over the insulating layer 5267 and the conductive layer5268 and is provided with an opening; a light-emitting layer 5270 whichis formed over the insulating layer 5269 and in the opening formed inthe insulating layer 5269; and a conductive layer 5271 formed over theinsulating layer 5269 and the light-emitting layer 5270.

Note that in each of the transistors illustrated in FIGS. 39A to 39C, asillustrated in FIG. 39B, over the transistor, it is possible to form aliquid crystal layer 5307 which is formed over the insulating layer 5305and the conductive layer 5306 and a conductive layer 5308 which isformed over the liquid crystal layer 5307.

The insulating layer 5261 can serve as a base film. The insulating layer5354 serves as an element isolation layer (e.g., a field oxide film).Each of the insulating layer 5263, the insulating layer 5302, and theinsulating layer 5356 can serve as a gate insulating film. Each of theconductive layer 5264, the conductive layer 5301, and the conductivelayer 5357 can serve as a gate electrode. Each of the insulating layer5265, the insulating layer 5267, the insulating layer 5305, and theinsulating layer 5358 can serve as an interlayer film or a planarizationfilm. Each of the conductive layer 5266, the conductive layer 5304, andthe conductive layer 5359 can serve as a wiring, an electrode of atransistor, an electrode of a capacitor, or the like. Each of theconductive layer 5268 and the conductive layer 5306 can serve as a pixelelectrode, a reflective electrode, or the like. The insulating layer5269 can serve as a partition wall. Each of the conductive layer 5271and the conductive layer 5308 can serve as a counter electrode, a commonelectrode, or the like.

As each of the substrate 5260 and the substrate 5300, a glass substrate,a quartz substrate, a semiconductor substrate (e.g., a silicon substrateor a single crystal substrate), an SOI substrate, a plastic substrate, ametal substrate, a stainless steel substrate, a substrate includingstainless steel foil, a tungsten substrate, a substrate includingtungsten foil, a flexible substrate, or the like can be used. As a glasssubstrate, a barium borosilicate glass substrate, an aluminoborosilicateglass substrate, or the like can be used. For a flexible substrate, aflexible synthetic resin such as plastics typified by polyethyleneterephthalate (PET), polyethylene naphthalate (PEN), or polyethersulfone (PES), or acrylic can be used. Alternatively, an attachment film(formed using polypropylene, polyester, vinyl, polyvinyl fluoride,polyvinyl chloride, or the like), paper including a fibrous material, abase material film (formed using polyester, polyamide, polyimide, aninorganic vapor deposition film, paper, or the like), or the like can beused.

As the semiconductor substrate 5352, a single crystal silicon substratehaving n-type or p-type conductivity can be used. Note that thisembodiment is not limited to this, and parts or all of the substratesthat can be used as the semiconductor substrate 5352 can be used as thesemiconductor substrate 5352. The region 5353 is a region where animpurity is added to the semiconductor substrate 5352 and serves as awell. For example, in the case where the semiconductor substrate 5352has p-type conductivity, the region 5353 has n-type conductivity andserves as an n-well. On the other hand, in the case where thesemiconductor substrate 5352 has n-type conductivity, the region 5353has p-type conductivity and serves as a p-well. The region 5355 is aregion where an impurity is added to the semiconductor substrate 5352and serves as a source region or a drain region. Note that an LDD regioncan be formed in the semiconductor substrate 5352.

For the insulating layer 5261, a single-layer structure or a layeredstructure of an insulating film containing oxygen or nitrogen, such assilicon oxide (SiO_(x)), silicon nitride (SiN_(x)), silicon oxynitride(SiO_(x)N_(y)) (x>y>0), or silicon nitride oxide (SiN_(x)O_(y)) (x>y>0),can be used. In the case where the insulating layer 5261 has a two-layerstructure, a silicon nitride film and a silicon oxide film can be formedas a first insulating layer and a second insulating layer, respectively.In the case where the insulating layer 5261 has a three-layer structure,a silicon oxide film, a silicon nitride film, and a silicon oxide filmcan be formed as a first insulating layer, a second insulating layer,and a third insulating layer, respectively.

For each of the semiconductor layer 5262, the semiconductor layer 5303a, and the semiconductor layer 5303 b, a non-single-crystalsemiconductor (e.g., amorphous silicon, polycrystalline silicon, ormicrocrystalline silicon), a single crystal semiconductor, a compoundsemiconductor or an oxide semiconductor (e.g., ZnO, InGaZnO, SiGe, GaAs,IZO (indium zinc oxide), ITO (indium tin oxide), SnO, TiO, or AlZnSnO(AZTO)), an organic semiconductor, a carbon nanotube, or the like can beused.

Note that for example, the region 5262 a is an intrinsic region where animpurity is not added to the semiconductor layer 5262 and serves as achannel region. However, an impurity can be added to the region 5262 a.The concentration of the impurity added to the region 5262 a ispreferably lower than the concentration of an impurity added to theregion 5262 b, the region 5262 c, the region 5262 d, or the region 5262e. Each of the region 5262 b and the region 5262 d is a region to whichan impurity is added at lower concentration than the region 5262 c orthe region 5262 e and serves as an LDD (lightly doped drain) region.Note that the region 5262 b and the region 5262 d can be eliminated.Each of the region 5262 c and the region 5262 e is a region to which animpurity is added at high concentration and serves as a source region ora drain region.

Note that the semiconductor layer 5303 b is a semiconductor layer towhich phosphorus or the like is added as an impurity element and hasn-type conductivity.

Note that in the case where an oxide semiconductor or a compoundsemiconductor is used for the semiconductor layer 5303 a, thesemiconductor layer 5303 b can be eliminated.

For each of the insulating layer 5263, the insulating layer 5302, andthe insulating layer 5356, a single-layer structure or a layeredstructure of an insulating film containing oxygen or nitrogen, such assilicon oxide (SiO_(x)), silicon nitride (SiN_(x)), silicon oxynitride(SiO_(x)N_(y)) (x>y>0), or silicon nitride oxide (SiN_(x)O_(y)) (x>y>0),can be used.

As each of the conductive layer 5264, the conductive layer 5266, theconductive layer 5268, the conductive layer 5271, the conductive layer5301, the conductive layer 5304, the conductive layer 5306, theconductive layer 5308, the conductive layer 5357, and the conductivelayer 5359, a conductive film having a single-layer structure or alayered structure, or the like can be used. For the conductive film, thegroup consisting of aluminum (Al), tantalum (Ta), titanium (Ti),molybdenum (Mo), tungsten (W), neodymium (Nd), chromium (Cr), nickel(Ni), platinum (Pt), gold (Au), silver (Ag), copper (Cu), manganese(Mn), cobalt (Co), niobium (Nb), silicon (Si), iron (Fe), palladium(Pd), carbon (C), scandium (Sc), zinc (Zn), gallium (Ga), indium (In),tin (Sn), zirconium (Zr), and cerium (Ce); a single-layer filmcontaining one element selected from the above group; a compoundcontaining one or more elements selected from the above group; or thelike can be used. Note that the single-layer film or the compound cancontain phosphorus (P), boron (B), arsenic (As), and/or oxygen (O), forexample.

A compound containing one or more elements selected from the aboveplurality of elements (e.g., an alloy), a compound containing nitrogenand one or more elements selected from the above plurality of elements(e.g., a nitride film), a compound containing silicon and one or moreelements selected from the above plurality of elements (e.g., a silicidefilm), a nanotube material, or the like can be used as the compound.Indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxidecontaining silicon oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO),cadmium tin oxide (CTO), aluminum-neodymium (Al—Nd), aluminum-tungsten(Al—W), aluminum-zirconium (Al—Zr), aluminum titanium (Al—Ti),aluminum-cerium (Al—Ce), magnesium-silver (Mg—Ag), molybdenum-niobium(Mo—Nb), molybdenum-tungsten (Mo—W), molybdenum-tantalum (Mo—Ta), or thelike can be used as an alloy. Titanium nitride, tantalum nitride,molybdenum nitride, or the like can be used for a nitride film. Tungstensilicide, titanium silicide, nickel silicide, aluminum silicon,molybdenum silicon, or the like can be used for a silicide film. Acarbon nanotube, an organic nanotube, an inorganic nanotube, a metalnanotube, or the like can be used as a nanotube material.

For each of the insulating layer 5265, the insulating layer 5267, theinsulating layer 5269, the insulating layer 5305, and the insulatinglayer 5358, an insulating layer having a single-layer structure or alayered structure, or the like can be used. As the insulating layer, afilm containing oxygen or nitrogen, such as silicon oxide (SiO_(x)),silicon nitride (SiN_(x)), silicon oxynitride (SiO_(x)N_(y)) (x>y>0)film, or silicon nitride oxide (SiN_(x)O_(y)) (x>y>0); a film containingcarbon such as diamond-like carbon (DLC); an organic material such as asiloxane resin, epoxy, polyimide, polyamide, polyvinyl phenol,benzocyclobutene, or acrylic; or the like can be used.

For the light-emitting layer 5270, an organic EL element, an inorganicEL element, or the like can be used. For the organic EL element, asingle-layer structure or a layered structure of a hole injection layerformed using a hole injection material, a hole transport layer formedusing a hole transport material, a light-emitting layer formed using alight-emitting material, an electron transport layer formed using anelectron transport material, an electron injection layer formed using anelectron injection material, or a layer in which a plurality of thesematerials are mixed can be used.

Note that an insulating layer which serves as an alignment film, aninsulating layer which serves as a protrusion portion, or the like canbe formed over the insulating layer 5305 and the conductive layer 5306.

Note that an insulating layer or the like which serves as a colorfilter, a black matrix, or a protrusion portion can be formed over theconductive layer 5308. An insulating layer which serves as an alignmentfilm can be formed below the conductive layer 5308.

The transistor in this embodiment can be used for the semiconductordevice in Embodiment 1 or 2. In particular, a non-single-crystalsemiconductor, an amorphous semiconductor, a microcrystallinesemiconductor, an organic semiconductor, an oxide semiconductor, or thelike is used for the semiconductor layer in FIG. 39B, the transistordeteriorates. However, deterioration of the transistor can be suppressedin any of the semiconductor devices, the shift registers, or the displaydevices in Embodiments 1 to 6, which is advantageous.

Embodiment 7

In this embodiment, cross-sectional structures of a display device aredescribed with reference to FIGS. 40A to 40C.

FIG. 40A is a top view of a display device. A driver circuit 5392 and apixel portion 5393 are formed over a substrate 5391. An example of thedriver circuit 5392 is a scan line driver circuit, a signal line drivercircuit, or the like.

FIG. 40B illustrates a cross section A-B in FIG. 40A. FIG. 40Billustrates a substrate 5400, a conductive layer 5401 formed over thesubstrate 5400, an insulating layer 5402 formed so as to cover theconductive layer 5401, a semiconductor layer 5403 a formed over theconductive layer 5401 and the insulating layer 5402, a semiconductorlayer 5403 b formed over the semiconductor layer 5403 a, a conductivelayer 5404 formed over the semiconductor layer 5403 b and the insulatinglayer 5402, an insulating layer 5405 which is formed over the insulatinglayer 5402 and the conductive layer 5404 and is provided with an openingportion, a conductive layer 5406 formed over the insulating layer 5405and in the opening portion in the insulating layer 5405, an insulatinglayer 5408 provided over the insulating layer 5405 and the conductivelayer 5406, a liquid crystal layer 5407 formed over the insulating layer5405, a conductive layer 5409 formed over the liquid crystal layer 5407and the insulating layer 5408, and a substrate 5410 provided over theconductive layer 5409.

The conductive layer 5401 can serve as a gate electrode. The insulatinglayer 5402 can serve as a gate insulating film. The conductive layer5404 can serve as a wiring, an electrode of a transistor, an electrodeof a capacitor, or the like. The insulating layer 5405 can serve as aninterlayer film or a planarization film. The conductive layer 5406 canserve as a wiring, a pixel electrode, or a reflective electrode. Theinsulating layer 5408 can serve as a sealant. The conductive layer 5409can serve as a counter electrode or a common electrode.

Here, parasitic capacitance is generated between the driver circuit 5392and the conductive layer 5409 in some cases. Accordingly, an outputsignal from the driver circuit 5392 or a potential of each node isdistorted or delayed, or power consumption is increased. However, whenthe insulating layer 5408 which can serve as the sealant is formed overthe driver circuit 5392 as illustrated in FIG. 40B, parasiticcapacitance generated between the driver circuit 5392 and the conductivelayer 5409 can be reduced. This is because the dielectric constant ofthe sealant is lower than the dielectric constant of the liquid crystallayer. Therefore, distortion or delay of the output signal from thedriver circuit 5392 or the potential of each node can be reduced.Alternatively, power consumption of the driver circuit 5392 can bereduced.

Note that as illustrated in FIG. 40C, the insulating layer 5408 whichcan serve as the sealant can be formed over part of the driver circuit5392. Also in such a case, parasitic capacitance generated between thedriver circuit 5392 and the conductive layer 5409 can be reduced. Thus,distortion or delay of the output signal from the driver circuit 5392 orthe potential of each node can be reduced. Note that this embodiment isnot limited to this. It is possible not to form the insulating layer5408, which can serve as the sealant, over the driver circuit 5392.

Note that a display element is not limited to a liquid crystal element,and a variety of display elements such as an EL element or anelectrophoretic element can be used.

In this embodiment, cross-sectional structures of the display device aredescribed. Such a structure can be combined with any of thesemiconductor devices in Embodiments 1 and 2. For example, in the casewhere a non-single-crystal semiconductor, a microcrystallinesemiconductor, an organic semiconductor, an oxide semiconductor, or thelike is used for a semiconductor layer of a transistor, the channelwidth of the transistor is increased. However, by reducing parasiticcapacitance of the driver circuit as in this embodiment, the channelwidth of the transistor can be decreased. Therefore, a layout area canbe reduced, so that the frame of the display device can be reduced.Alternatively, the display device can have higher definition.

Embodiment 8

In this embodiment, manufacturing steps of a semiconductor device aredescribed. Here, manufacturing steps of a transistor and a capacitor aredescribed. In particular, manufacturing steps when an oxidesemiconductor is used for a semiconductor layer are described.

Manufacturing steps of a transistor and a capacitor are described withreference to FIGS. 41A to 41C. FIGS. 41A to 41C illustrate manufacturingsteps of a transistor 5441 and a capacitor 5442. The transistor 5441 isan inverted staggered thin film transistor, in which a wiring isprovided over an oxide semiconductor layer with a source electrode or adrain electrode therebetween.

First, a first conductive layer is formed over the entire surface of asubstrate 5420 by sputtering. Next, the first conductive layer isselectively etched with the use of a resist mask formed through aphotolithography process using a first photomask, so that a conductivelayer 5421 and a conductive layer 5422 are formed. The conductive layer5421 can serve as a gate electrode. The conductive layer 5422 can serveas one of the electrodes of the capacitor. Note that this embodiment isnot limited to this, and each of the conductive layers 5421 and 5422 caninclude a portion serving as a wiring, a gate electrode, or an electrodeof the capacitor. After that, the resist mask is removed.

Next, an insulating layer 5423 is formed over the entire surface byplasma-enhanced CVD or sputtering. The insulating layer 5423 can serveas a gate insulating layer and is formed so as to cover the conductivelayers 5421 and 5422. Note that the thickness of the insulating layer5423 is 50 to 250 nm.

Next, the insulating layer 5423 is selectively etched with the use of aresist mask formed through a photolithography process using a secondphotomask, so that a contact hole 5424 which reaches the conductivelayer 5421 is formed. Then, the resist mask is removed. Note that thisembodiment is not limited to this, and the contact hole 5424 can beeliminated. Alternatively, the contact hole 5424 can be formed after anoxide semiconductor layer is formed. A cross-sectional view of the stepsso far corresponds to FIG. 41A.

Next, an oxide semiconductor layer is formed over the entire surface bysputtering. Note that this embodiment is not limited to this, and it ispossible to form the oxide semiconductor layer by sputtering and to forma buffer layer (e.g., an n⁺ layer) thereover. Note that the thickness ofthe oxide semiconductor layer is 5 to 200 nm.

Next, the oxide semiconductor layer is selectively etched using a thirdphotomask. After that, the resist mask is removed.

Next, a second conductive layer is formed over the entire surface bysputtering. Then, the second conductive layer is selectively etched withthe use of a resist mask formed through a photolithography process usinga fourth photomask, so that a conductive layer 5429, a conductive layer5430, and a conductive layer 5431 are formed. The conductive layer 5429is connected to the conductive layer 5421 through the contact hole 5424.The conductive layers 5429 and 5430 can serve as the source electrodeand the drain electrode. The conductive layer 5431 can serve as theother of the electrodes of the capacitor. Note that this embodiment isnot limited to this, and each of the conductive layers 5429, 5430, and5431 can include a portion serving as a wiring, the source electrode,the drain electrode, or the electrode of the capacitor. Across-sectional view of the steps so far corresponds to FIG. 41B.

Next, heat treatment is performed at 200 to 600° C. in an air atmosphereor a nitrogen atmosphere. Through this heat treatment, rearrangement atthe atomic level occurs in an In—Ga—Zn—O-based non-single-crystal layer.In this manner, through heat treatment (including light annealing),strain which inhibits carrier movement is released. Note that there isno particular limitation to timing at which the heat treatment isperformed, and the heat treatment can be performed at any time after theoxide semiconductor layer is formed.

Next, an insulating layer 5432 is formed over the entire surface. Theinsulating layer 5432 can have either a single-layer structure or alayered structure. For example, in the case where an organic insulatinglayer is used as the insulating layer 5432, the organic insulating layeris formed in such a manner that a composition which is a material forthe organic insulating layer is applied and subjected to heat treatmentat 200 to 600° C. in an air atmosphere or a nitrogen atmosphere. Byforming the organic insulating layer which is in contact with the oxidesemiconductor layer in this manner, a thin film transistor with highlyreliable electric characteristics can be manufactured. Note that in thecase where an organic insulating layer is used as the insulating layer5432, a silicon nitride film or a silicon oxide film can be providedbelow the organic insulating layer.

Next, a third conductive layer is formed over the entire surface. Then,the third conductive layer is selectively etched with the use of aresist mask formed through a photolithography process using a fifthphotomask, so that a conductive layer 5433 and a conductive layer 5434are formed. A cross-sectional view of the steps so far corresponds toFIG. 41C. Each of the conductive layers 5433 and 5434 can serve as awiring, a pixel electrode, a reflective electrode, a light-transmittingelectrode, or the electrode of the capacitor. In particular, since theconductive layer 5434 is connected to the conductive layer 5422, theconductive layer 5434 can serve as the electrode of the capacitor 5442.Note that this embodiment is not limited to this, and the conductivelayers 5433 and 5434 can have a function of connecting the firstconductive layer and the second conductive layer to each other. Forexample, by connecting the conductive layers 5433 and 5434 to eachother, the conductive layer 5422 and the conductive layer 5430 can beconnected to each other through the third conductive layer (theconductive layers 5433 and 5434).

Through the above steps, the transistor 5441 and the capacitor 5442 canbe manufactured.

Note that as illustrated in FIG. 41D, an insulating layer 5435 can beformed over the oxide semiconductor layer 5425. Note that referencenumerals 5437 and 5436 denote a conductive layer and an oxidesemiconductor layer, respectively.

Note that as illustrated in FIG. 41E, the oxide semiconductor layer 5425can be formed after the second conductive layer is patterned. Note thatreference numerals 5438 and 5439 each denote a conductive layer.

Note that for the substrate, the insulating film, the conductive film,and the semiconductor layer in this embodiment, the materials describedin the other embodiments or materials which are similar to thosedescribed in this specification can be used.

Embodiment 9

In this embodiment, a layout diagram (also referred to as a top view) ofa semiconductor device is described. Specifically, in this embodiment, alayout diagram of the semiconductor device in FIG. 1A is described. Notethat the content described in this embodiment can be combined with thecontent described in any of the other embodiments as appropriate. Notethat the layout diagram in this embodiment is one example, and thelayout diagram of the semiconductor device is not limited to this.

The layout diagram in this embodiment is described with reference toFIG. 42. FIG. 42 is a layout diagram of the semiconductor device in FIG.1A.

Transistors, wirings, and the like illustrated in FIG. 42 include aconductive layer 901, a semiconductor layer 902, a conductive layer 903,a conductive layer 904, and a contact hole 905. However, this embodimentis not limited to this. A different conductive layer, an insulatingfilm, or a different contact hole can be newly formed. For example, acontact hole for connecting the conductive layer 901 and the conductivelayer 903 to each other can be additionally provided.

The conductive layer 901 can include a portion which functions as a gateelectrode or a wiring. The semiconductor layer 902 can include a portionwhich functions as a semiconductor layer of the transistor. Theconductive layer 903 can include a portion which functions as a wiring,a source, or a drain. The conductive layer 904 can include a portionwhich functions as a light-transmitting electrode, a pixel electrode, ora wiring. The contact hole 905 has a function of connecting theconductive layer 901 and the conductive layer 904 to each other or afunction of connecting the conductive layer 903 and the conductive layer904 to each other.

Note that the semiconductor layer 902 can be provided in a portion wherethe conductive layer 901 and the conductive layer 903 overlap with eachother. Accordingly, parasitic capacitance between the conductive layer901 and the conductive layer 903 can be reduced, so that noise can bereduced. For a similar reason, the semiconductor layer 902 or theconductive layer 903 can be provided in a portion where the conductivelayer 901 and the conductive layer 904 overlap with each other.

Note that the conductive layer 904 can be formed over part of theconductive layer 901 and can be connected to the conductive layer 901through the contact hole 905. Accordingly, wiring resistance can belowered. Alternatively, the conductive layers 903 and 904 can be formedover part of the conductive layer 901; the conductive layer 901 can beconnected to the conductive layer 904 through the contact hole 905; andthe conductive layer 903 can be connected to the conductive layer 904through the different contact hole 905. In this manner, the wiringresistance can be further lowered.

Note that the conductive layer 904 can be formed over part of theconductive layer 903, and the conductive layer 903 can be connected tothe conductive layer 904 through the contact hole 905. Accordingly,wiring resistance can be lowered.

Note that the conductive layer 901 or the conductive layer 903 can beformed below part of the conductive layer 904, and the conductive layer904 can be connected to the conductive layer 901 or the conductive layer903 through the contact hole 905. Accordingly, wiring resistance can belowered.

Note that as described above, parasitic capacitance between the gate ofthe transistor 101 and the second terminal of the transistor 101 can bemade higher than parasitic capacitance between the gate of thetransistor 101 and the first terminal of the transistor 101. Therefore,in the transistor 101, an area where the conductive layer 903functioning as the second terminal and the conductive layer 901functioning as the gate overlap with each other is preferably largerthan an area where the conductive layer 903 functioning as the firstterminal and the conductive layer 901 functioning as the gate overlapwith each other.

Embodiment 10

In this embodiment, examples of electronic devices are described.

FIGS. 43A to 43H and FIGS. 44A to 44D illustrate electronic devices.These electronic devices can include a housing 5000, a display portion5001, a speaker 5003, an LED lamp 5004, operation keys 5005 (including apower switch or an operation switch), a connection terminal 5006, asensor 5007 (a sensor having a function of measuring force,displacement, position, speed, acceleration, angular velocity,rotational frequency, distance, light, liquid, magnetism, temperature,chemical substance, sound, time, hardness, electric field, current,voltage, electric power, radiation, flow rate, humidity, gradient,oscillation, smell, or infrared ray), a microphone 5008, and the like.

FIG. 43A illustrates a mobile computer, which can include a switch 5009,an infrared port 5010, and the like in addition to the above objects.FIG. 43B illustrates a portable image regenerating device provided witha memory medium (e.g., a DVD regenerating device), which can include asecond display portion 5002, a memory medium reading portion 5011, andthe like in addition to the above objects. FIG. 43C illustrates agoggle-type display, which can include the second display portion 5002,a support portion 5012, an earphone 5013, and the like in addition tothe above objects. FIG. 43D illustrates a portable game machine, whichcan include the memory medium reading portion 5011 and the like inaddition to the above objects. FIG. 43E illustrates a projector, whichcan include a light source 5033, a projector lens 5034, and the like inaddition to the above objects. FIG. 43F illustrates a portable gamemachine, which can include the second display portion 5002, the memorymedium reading portion 5011, and the like in addition to the aboveobjects. FIG. 43G illustrates a television receiver, which can include atuner, an image processing portion, and the like in addition to theabove objects. FIG. 43H illustrates a portable television receiver,which can include a charger 5017 capable of transmitting and receivingsignals and the like in addition to the above objects. FIG. 44Aillustrates a display, which can include a support base 5018 and thelike in addition to the above objects. FIG. 44B illustrates a camera,which can include an external connecting port 5019, a shutter button5015, an image receiving portion 5016, and the like in addition to theabove objects. FIG. 44C illustrates a computer, which can include apointing device 5020, the external connecting port 5019, a reader/writer5021, and the like in addition to the above objects. FIG. 44Dillustrates a mobile phone, which can include an antenna, a tuner ofone-segment (1 seg digital TV broadcasts) partial reception service formobile phones and mobile terminals, and the like in addition to theabove objects.

The electronic devices illustrated in FIGS. 43A to 43H and FIGS. 44A to44D can have a variety of functions, for example, a function ofdisplaying a lot of information (e.g., a still image, a moving image,and a text image) on a display portion; a touch panel function; afunction of displaying a calendar, date, time, and the like; a functionof controlling processing with a lot of software (programs); a wirelesscommunication function; a function of being connected to a variety ofcomputer networks with a wireless communication function; a function oftransmitting and receiving a lot of data with a wireless communicationfunction; a function of reading a program or data stored in a memorymedium and displaying the program or data on a display portion. Further,the electronic device including a plurality of display portions can havea function of displaying image information mainly on one display portionwhile displaying text information on another display portion, a functionof displaying a three-dimensional image by displaying images whereparallax is considered on a plurality of display portions, or the like.Furthermore, the electronic device including an image receiving portioncan have a function of photographing a still image, a function ofphotographing a moving image, a function of automatically or manuallycorrecting a photographed image, a function of storing a photographedimage in a memory medium (an external memory medium or a memory mediumincorporated in the camera), a function of displaying a photographedimage on the display portion, or the like. Note that functions which canbe provided for the electronic devices illustrated in FIGS. 43A to 43Hand FIGS. 44A to 44D are not limited them, and the electronic devicescan have a variety of functions.

The electronic devices described in this embodiment each include adisplay portion for displaying some kind of information. By combiningthe electronic device in this embodiment with any of the semiconductordevices, shift registers, or display devices in Embodiments 1 to 5, itis possible to achieve improvement in reliability, improvement in yield,reduction in cost, an increase in the size of the display portion, anincrease in the definition of the display portion, or the like.

Next, applications of semiconductor devices are described.

FIG. 44E illustrates an example in which a semiconductor device isincorporated in a building structure. FIG. 44E illustrates a housing5022, a display portion 5023, a remote controller 5024 which is anoperation portion, a speaker 5025, and the like. The semiconductordevice is incorporated in the building structure as a wall-hanging typeand can be provided without requiring a large space.

FIG. 44F illustrates another example in which a semiconductor device isincorporated in a building structure. A display panel 5026 isincorporated in a prefabricated bath unit 5027, so that a bather canview the display panel 5026.

Note that although this embodiment describes the wall and theprefabricated bath are given as examples of the building structures,this embodiment is not limited to them. The semiconductor devices can beprovided in a variety of building structures.

Next, examples in which semiconductor devices are incorporated in movingobjects are described.

FIG. 44G illustrates an example in which a semiconductor device isincorporated in a car. A display panel 5028 is incorporated in a carbody 5029 of the car and can display information related to theoperation of the car or information input from inside or outside of thecar on demand. Note that the display panel 5028 may have a navigationfunction.

FIG. 44H illustrates an example in which a semiconductor device isincorporated in a passenger airplane. FIG. 44H illustrates a usagepattern when a display panel 5031 is provided for a ceiling 5030 above aseat of the passenger airplane. The display panel 5031 is incorporatedin the ceiling 5030 through a hinge portion 5032, and a passenger canview the display panel 5031 by stretching of the hinge portion 5032. Thedisplay panel 5031 has a function of displaying information by theoperation of the passenger.

Note that although bodies of a car and an airplane are illustrated asexamples of moving objects in this embodiment, this embodiment is notlimited to them. The semiconductor devices can be provided for a varietyof objects such as two-wheeled vehicles, four-wheeled vehicles(including cars, buses, and the like), trains (including monorails,railroads, and the like), and vessels.

This application is based on Japanese Patent Application serial no.2009-209099 filed with Japan Patent Office on Sep. 10, 2009, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a first to afifth wirings; and a shift register comprising a first to a fifthtransistors, wherein one of a first terminal and a second terminal ofthe first transistor is electrically connected to the first wiring,wherein the other of the first terminal and the second terminal of thefirst transistor is electrically connected to the second wiring, whereinone of a first terminal and a second terminal of the second transistoris electrically connected to the third wiring, wherein the other of thefirst terminal and the second terminal of the second transistor iselectrically connected to the second wiring, wherein a gate of thesecond transistor is electrically connected to the fourth wiring,wherein one of a first terminal and a second terminal of the thirdtransistor is electrically connected to the third wiring, wherein theother of the first terminal and the second terminal of the thirdtransistor is electrically connected to the second wiring, wherein agate of the third transistor is electrically connected to the fifthwiring; wherein one of a first terminal and a second terminal of thefourth transistor is electrically connected to a gate of the firsttransistor, wherein one of a first terminal and a second terminal of thefifth transistor is electrically connected to the first wiring, whereinthe other of the first terminal and the second terminal of the fifthtransistor is electrically connected to the gate of the firsttransistor, and wherein a gate of the fifth transistor is electricallyconnected to the fifth wiring.
 2. The semiconductor device according toclaim 1, wherein the other of the first terminal and the second terminalof the fourth transistor is electrically connected to the first wiring.3. The semiconductor device according to claim 1, wherein the fourthtransistor is diode-connected.
 4. The semiconductor device according toclaim 1, further comprising a gate driver, wherein the gate drivercomprises the shift register.
 5. The semiconductor device according toclaim 1, further comprising: a first substrate; a driver circuit on thefirst substrate; a second substrate over the first substrate and thedriver circuit; a sealant between the first substrate and the secondsubstrate, and overlapping with the driver circuit; and a liquid crystallayer between the first substrate and the second substrate, wherein thedriver circuit comprises the shift register.
 6. A semiconductor devicecomprising: a first to a fifth wirings; and a shift register comprisinga first to a sixth transistors, wherein one of a first terminal and asecond terminal of the first transistor is electrically connected to thefirst wiring, wherein the other of the first terminal and the secondterminal of the first transistor is electrically connected to the secondwiring, wherein one of a first terminal and a second terminal of thesecond transistor is electrically connected to the third wiring, whereinthe other of the first terminal and the second terminal of the secondtransistor is electrically connected to the second wiring, wherein agate of the second transistor is electrically connected to the fourthwiring, wherein one of a first terminal and a second terminal of thethird transistor is electrically connected to the third wiring, whereinthe other of the first terminal and the second terminal of the thirdtransistor is electrically connected to the second wiring, wherein agate of the third transistor is electrically connected to the fifthwiring; wherein one of a first terminal and a second terminal of thefourth transistor is electrically connected to a gate of the firsttransistor, wherein one of a first terminal and a second terminal of thefifth transistor is electrically connected to the first wiring, whereinthe other of the first terminal and the second terminal of the fifthtransistor is electrically connected to the gate of the firsttransistor, wherein a gate of the fifth transistor is electricallyconnected to the fifth wiring, wherein one of a first terminal and asecond terminal of the sixth transistor is electrically connected to thesecond wiring, wherein the other of the first terminal and the secondterminal of the sixth transistor is electrically connected to the gateof the first transistor, and wherein a gate of the sixth transistor iselectrically connected to the first wiring.
 7. The semiconductor deviceaccording to claim 6, wherein each of the first to the sixth transistorscomprises an oxide semiconductor layer.
 8. The semiconductor deviceaccording to claim 6, wherein the other of the first terminal and thesecond terminal of the fourth transistor is electrically connected tothe first wiring.
 9. The semiconductor device according to claim 6,wherein the fourth transistor is diode-connected.
 10. The semiconductordevice according to claim 6, further comprising a gate driver, whereinthe gate driver comprises the shift register.
 11. The semiconductordevice according to claim 6, further comprising: a first substrate; adriver circuit on the first substrate; a second substrate over the firstsubstrate and the driver circuit; a sealant between the first substrateand the second substrate, and overlapping with the driver circuit; and aliquid crystal layer between the first substrate and the secondsubstrate, wherein the driver circuit comprises the shift register. 12.A semiconductor device comprising: a first to a fifth wirings; and ashift register comprising a first to a fifth transistors, wherein one ofa first terminal and a second terminal of the first transistor iselectrically connected to the first wiring, wherein the other of thefirst terminal and the second terminal of the first transistor iselectrically connected to the second wiring, wherein one of a firstterminal and a second terminal of the second transistor is electricallyconnected to the third wiring, wherein the other of the first terminaland the second terminal of the second transistor is electricallyconnected to the second wiring, wherein a gate of the second transistoris electrically connected to the fourth wiring, wherein one of a firstterminal and a second terminal of the third transistor is electricallyconnected to the third wiring, wherein the other of the first terminaland the second terminal of the third transistor is electricallyconnected to the second wiring, wherein a gate of the third transistoris electrically connected to the fifth wiring; wherein one of a firstterminal and a second terminal of the fourth transistor is electricallyconnected to a gate of the first transistor, wherein one of a firstterminal and a second terminal of the fifth transistor is electricallyconnected to the first wiring, wherein the other of the first terminaland the second terminal of the fifth transistor is electricallyconnected to the gate of the first transistor, wherein a gate of thefifth transistor is electrically connected to the fifth wiring, andwherein each of the first to the fifth transistors comprises an oxidesemiconductor layer.
 13. The semiconductor device according to claim 12,wherein the other of the first terminal and the second terminal of thefourth transistor is electrically connected to the first wiring.
 14. Thesemiconductor device according to claim 12, wherein the fourthtransistor is diode-connected.
 15. The semiconductor device according toclaim 12, further comprising a gate driver, wherein the gate drivercomprises the shift register.
 16. The semiconductor device according toclaim 12, further comprising: a first substrate; a driver circuit on thefirst substrate; a second substrate over the first substrate and thedriver circuit; a sealant between the first substrate and the secondsubstrate, and overlapping with the driver circuit; and a liquid crystallayer between the first substrate and the second substrate, wherein thedriver circuit comprises the shift register.